SCROLL NEWS / DISCOVERY
Search headlines
Find the stories shaping the conversation.
Results for " next " 7,992 found 🔀 AI-powered Shuffle
Protect College Sports Act gains Senate approval in bipartisan vote
The Protect College Sports Act took its next step forward on Monday, with the Senate voting overwhelmingly 77-22 in favor of the proposed federal legislation reforming college athletics.
Harry Potter and the British business of international schools
Nord Anglia, Cognita, Inspired Education and other private equity-backed groups are profiting from history and rising global demand
Naughty Dog Will 'Fully Reveal' Intergalactic in 2027, but No Release Window Yet
Naughty Dog studio head Neil Druckmann concluded this year's "The Last of Us Day" by giving updates on the developer's current projects, teasing two new The Last of Us projects that "will expand the canon of The Last of Us beyond Part I and Part II" without confirming whether or not either one of them is a game, as well as saying that its next game, Intergalactic: The Heretic Project, will be "fully reveal[ed]" next year.
Kanza Education and Science Park hosts first Kanza Science Day of the year
14 elementary schools will get the chance to participate in Kanza Science Days, hosted at the Kanza Education and Science Park, over the next two weeks.
Phoenix Suns' Devin Booker Discusses Roster Growth
The franchise icon honors his father’s legacy with a symbolic jersey swap while mentoring a rising seven-footer poised to become the next cornerstone of the Suns’ future.
For the Third Straight Week, Former Buckeyes Dominate the NFL
For the third straight week, one of the main storylines from the NFL is the former Buckeyes dominating at the next level.
Doval Wants Giants Reunion to Extend Beyond This Season
After a whirlwind journey, Camilo Doval returns to the Bay Area determined to reclaim his command and anchor the San Francisco Giants’ bullpen next year.
As work requirements kick in for Medicaid, some states are taking a tougher stance
At least six states will require documentation that individuals are too sick to meet Medicaid work requirements kicking in next year. The rules are stricter than what the federal government is requiring.
The Next Bioweapon Could Attack Our Genes Instead of Our Bodies. I Promise You We’re Not Ready for That.
The most devastating weapons conceived by humanity cause cellular damage as a side effect. What would happen if the genetic mutation itself were the nefarious goal?
Teens and parents can learn how to build a business together at "Side Hustle School"
Got a teen with big ideas and a passion for business? Harrisburg University is offering families with high school students a new and unique way to try out entrepreneurship together. “Side Hustle School, a new, seven-week program, begins next month, giving student entrepreneurs and their support systems a chance to work together to develop small […]
Former MS Rep. Nick Bain shares plan to tackle state auditor backlog
After losing his state House reelection bid by two dozen votes, Nick Bain is touting that loss in his run to fill the state auditor's seat next year.
Flutter Entertainment (NYSE:FLUT) Shares Down 6.4%
Flutter Entertainment (NYSE:FLUT) Stock Price Down 6.4% - What's Next?
Alito recuses himself from major Supreme Court climate change case
(CNN) — Supreme Court Justice Samuel Alito announced Monday that he will recuse himself from a major climate change-related case the court is set to hear next week, following weeks
Tricolor start final stage of preparations for the San-São
This Monday (28), at SuperCT, Tricolor began the final stage of preparations for the derby against Santos, which will be played next Friday night (2), at 8 p.m., at MorumBIS, in a rescheduled match fr...
Apple Releases macOS Golden Gate 27.0.1 With Bug Fixes
Apple today released macOS 27.0.1, the first update to the macOS Golden Gate operating system that came out in mid-September. Mac users can download the new macOS Golden Gate software by using the Software Update section in System Settings. Apple says macOS Golden Gate 27.0.1 fixes unspecified bugs. Apple has also released macOS 26.7.1 and macOS 15.8.1 security updates. Apple has also released macOS 26.7.1 and macOS 15.8.1 security updates.
Ubisoft's calling its next push into gen-AI game development Motherbrain
Ubisoft has been quite enthusiastic about generative AI's use in game development, and a new trademark might sound familiar to Nintendo and Metroid fans.
Shawn Levy Inks Overall Deal With Disney’s 20th Television
The producer and director, who recently finished the next 'Star Wars' film for Disney, has been based at Netflix since 2017.
Shawn Levy Signs Overall TV Deal at Disney
The producer and director, who recently finished the next 'Star Wars' film for Disney, has been based at Netflix since 2017.
Rod Stewart confirms final tour after heart procedure and health scares
Rod Stewart announced his "Final Encore Tour," revealing next year's dates will be his last-ever tour after a coronary stent procedure and health setbacks.
Meta launches enterprise AI business seeking to cash in on vast spending
Chief executive Mark Zuckerberg opens a new front in his push to turn huge investment in the technology into profits
Next entry-level Kindle may get rounded screen corners and new colors
Leaked images show a possible new entry-level Kindle with flatter edges, rounded display corners and a side power button. Amazon has not announced it yet.
Russian drones hit Kyiv science academy and hospital
One person killed and six injured in attack on capital, as Volodymyr Zelenskyy urges countries to do more to protect Ukraine
Family business takes Mexican dining and one-stop shopping to next level at El Primo Produce
El Primo Produce & Restaurant in Norristown is the ultimate 'one stop shop'.
12 New Things to Expect From Apple This October
October will be an especially busy month for Apple this year, with the company set to release the iPhone Duo, both iOS 27.1 and iOS 27.2, and a new Mac Studio configuration with 512GB of RAM. In addition, up to six more Apple products may be unveiled next month, such as new iPad mini, HomePod mini, and Apple TV 4K models. Below, we have outlined 12 new things to expect from Apple this October. Confirmed iPhone Duo: The foldable iPhone Duo launches on Friday, October 23.
Disney Unveils Oasis Doc Premiere Date
Disney has unveiled premiere date for Steven Knight’s Oasis documentary on Disney+ and Hulu. The feature will land on October 9, just two weeks after tickets to Oasis’ next round of tour dates were sn...
Slipknot to perform in Hershey next summer; here are the details
Heavy metal band Slipknot recently announced a stadium tour, and Hershey is one of its planned stops in 2027.
Could Potter be England's next breakthrough star?
With Sarina Wiegman set to name her latest England squad on Tuesday, there is one name everyone is talking about - Lexi Potter. Here is why.
Wild Salmon vs. Farmed Salmon: Which One Is Better for Your Health?
Here’s exactly what you need to know next time you’re standing in the seafood aisle.
Consider the risks of taking that next sports bet
A look at what consumers should look for in the fine print before accepting any offers of bonuses, promotional bets, or incentives.
In brief: '9 to 5' headed back to theaters and more
Pour yourself a cup of ambition and head out to your local movie theater. 9 to 5 is headed back to movie theaters for a special, weeklong run starting on Oct. 9. This will be a newly restored version of the classic satirical workplace comedy starring the late Dolly Parton. Additionally, Disney is set to donate net proceeds from each ticket purchased for the rerelease in the U.S. to the Dollywood Foundation in support of its flagship program, Dolly Parton’s Imagination Library. Disney is the parent company of ABC News ...Off Campus star Ella Bright has found her next gig. The actress confirmed she will star opposite Mason Thames in the movie Narcs in a post shared to her Instagram Story. This marks Bright's first major studio feature role. The upcoming coming-of-age comedy will be made for Sony Pictures. While the movie's plot is being kept under wraps, it will serve as the directorial debut of John Phillips, the writer of No Hard Feelings, Good Boys and Dirty Grandpa ... TNCMS.AdManager.render({region: 'fixed-big-ad-top-asset', slot: 1, fold: "above"}); Did you miss Evil Dead Burn in theaters? Not to worry. The film is set to make its global streaming debut on HBO Max on Oct. 2. Souheila Yacoub, Tandi Wright, Hunter Doohan, Luciane Buchanan, Erroll Shand and Maude Davey star in the film that was directed by Sébastien Vaniček ...Copyright © 2026, ABC Audio. All rights reserved. Thank you for reading kmaland.comAt KMA, we attempt to be accurate in our reporting. If you see a typo or mistake in a story, please contact us by emailing kmaradio@kmaland.com.
Democrats Keep Coming to South Carolina to Stump for Midterm Candidates. It's All About 2028
COLUMBIA, S.C. (AP) — On paper, South Carolina might be an odd place for Democrats to converge to campaign for midterm candidates. Republicans dominate state politics, and there's slim chance of that changing this year. But South Carolina is also the first state in Democrats' next presidential ...
Explainer-The political chess behind the ECB’s next leadership shake-up
FRANKFURT, Sept 28 (Reuters) - The euro zone will choose a new European Central Bank president next year and replace up to two-thirds of the bank's six-member executive board in an intricate game of political chess among the bloc's 21 countries. The fo...
Explainer-The political chess behind the ECB’s next leadership shake-up
FRANKFURT, Sept 28 (Reuters) - The euro zone will choose a new European Central Bank president next year and replace up to two-thirds of the bank's six-member executive board in an intricate game of political chess among the bloc's 21 countries. The fo...
Explainer: The political chess behind the ECB's next leadership shake-up
The euro zone will choose a new European Central Bank president next year and replace up to two-thirds of the bank's six-member executive board in an intricate game of political chess among the bloc's 21 countries.
Sony details God of War Laufey’s Digital Deluxe Edition contents and pre-order bonus
Pre-orders for the next God of War game start on Tuesday…
What will California's next governor do about healthcare? Here are Becerra and Hilton's plans
Democrat Xavier Becerra and Republican Steve Hilton say they’re mindful of voters’ worries about healthcare costs, but their plans don’t have much detail.
Construction set to begin on major Texas A&M building
"This facility allows us to reimagine meat science for the next generation."
Buttler out of tri-series while England prepare central contracts
Wicketkeeper Jos Buttler will miss England's 50-over tri-series in Pakistan next month, with Jordan Cox set to be given another chance to impress in his place.
Lee Beebe Jr. saved the day against Northwestern. What’s next?
Beebe Jr. stepped up in a major way last Friday. What does his role look like moving forward given the room’s health?
Larissa Waters steps down as Greens leader due to ill health
Ballot for new leader expected next week after Waters quits to manage pre-existing kidney disease that has ‘declined significantly’
After 25 Years In Hollywood, Jamee Natella Is Writing Her Own Chapter
Producer Jamee Natella's WorldRide Impact, guided by a youth board, brings global culture to kids through travel, food, art and sport, a bet on the next generation's IP.
Bayern monitoring Atlético Madrid man ahead of potential free transfer
Bayern Munich are monitoring Atlético Madrid’s Marcos Llorente with a view to potentially signing him on a free transfer next summer, according to AS.With the 31-year-old’s contract expiring in t...
All Aboard Banijay Entertainment’s Landmark MIPCOM 2026 Line-Up
Media and entertainment group, Banijay Entertainment, today unveils its newly combined powerhouse of content for MIPCOM 2026. Celebrating highly anticipated premium scripted staples, versatile next-gen formats, and standout catalogue champions, the business teases the hits set to grace its newly named “Banijay House” in Cannes this October. This year’s line-up is led by gripping legal […]
The Apple Next Vision Pro Is Reportedly on 'Life Support'
It might still happen, but I mean, come on.
Hyperbolic wave attractors could power next-generation optical chips
Scientists found a way to stop light and sound waves from scattering chaotically inside complex, oddly shaped spaces.
Kremlin pressures Russian businesses to pay for drone defences
Vladimir Putin backs army and spy agencies’ push to make businesses defend themselves from Ukrainian strikes
Wisconsin AG debate between Kaul and Toney set for October 11
MADISON (WKOW) — The candidates for Wisconsin's next attorney general have agreed to debate, and it will air on WKOW.
Art that serves others: How a Harnett County muralist is making a lasting mark in her community
Van Goat Studios, which has been operating since 2019, has allowed Johnson to express herself and reflect the spirit of local communities through murals. Photo provided by Elyse Johnson.Elyse Johnson of Van Goat Studios in Dunn wants to spread her artistry and make a lasting mark in her community. Van Goat, which has been operating since 2019, has allowed Johnson to express herself through murals and decorating electrical boxes in the urban landscapes of North Carolina. On top of traditional mural painting, Johnson offers what she calls “portable murals,” an option tailor-made for structure owners who do not want to commit to a design for their wall.“A contractor builds a framed piece of wood, and then they can frame the ‘mural’ onto the wood, whether it’s into their building, whether it’s interior or exterior,” Johnson said. The beginnings of Johnson’s journey into establishing Van Goat Studios reflect the teachings she wants artists to take away today: everything is a learning opportunity. When she started Van Goat, she shared it was a joint venture with a business partner. “I mainly did that because I didn’t feel like I was ready to go and do this on my own,” Johnson said. Her business partner eventually dropped out of the project, deciding she wanted to pursue other forms of art. That is when Johnson was thrust into growing her business on her own during and in the aftermath of the COVID-19 pandemic. “I had built up my confidence enough to go out and reach new heights,” she said. “And I was probably one of the few that benefited from COVID.”The moment presented a silver lining for Johnson. One of her first projects was a Farmers Day mural for the town of Coats. “When COVID-19 hit, Coats was not able to hold their annual festival, so they had a little bit of savings. They decided they wanted to do something for their community without getting anyone sick,” Johnson said.From there, word of mouth spread. Now, Johnson has an organic way of approaching projects. “Like a lot of muralists, if I feel inspired by a building, I will just go up and talk to that building owner and tell them a mural is something they should consider,” Johnson said. But above all, Johnson says she wants art to be accessible to everyone. Johnson said she is trying to stick to projects that benefit “the little guys.” “I’m not trying to go for a project in downtown Raleigh to get the eight-foot-tall building,” Johnson said. “I’m not trying to go to those major cities and get those huge buildings for two reasons: one, I don’t want to go that high; two, my passion really lies with the small guys.” But due to financial constraints and the material reality of art commerce, that requires open communication, she added. “I don’t want to just snowball you with this huge price, and then you just shut me down because it wasn’t what you were thinking,” Johnson said. “At the same time, I am an advocate for the arts, so I’m not going to give you a $10,000 mural when you’re only going to pay $5,000.” There is a healthy balance in explaining the artistic process and working with clients and the surrounding community, Johnson said.“Your municipality invested this, and this is why they invested this, and this is how it’s going to help and improve your community,” she noted. “Same thing when I’m talking to a small business. You asked for me to come at you with this that is outside your budget. How do we make this still your same exact goal, but within your budget lines?” Johnson also provides lessons to aspiring artists. She does so with a mission: how do you master the balance between being a great artist and a competent business owner? “We still do art lessons, but I’m also going to give you business scenarios,” she noted.One of the scenarios she has come up with for her students is a T-shirt competition. “The kids have to think about ‘okay, I can’t just draw whatever I want on a T-shirt. I need to think about what colors Miss Elyse likes. What does Miss Elyse’s logo look like? What would Miss Elyse like?’” Johnson said. “So the design needs to be around that kind of concept.” As Johnson looks toward the future of Van Goat Studios, she is thinking of time, longevity and succession. Johnson is a new mom, which she said has shaped how she sees the future of the studio.“I still want my name and my business out there continuing, so that when my daughter is of age and she can be more independent, then I can be out there doing more and more,” Johnson said. “I would love to get a student to pass this on to, or an intern. I would love for this business to be passed on to the next generation and let them go.”
Dan Wilson out as Seattle Mariners manager
Dan Wilson will not return as the Seattle Mariners' manager next season, he and the team said Sunday. Wilson made the announcement shortly after the Mariners finished off a 7-3 win over the Los Angeles Angels, the ending to a disappointing 76-86 season that began with World Series hopes after the Mariners made it to Game 7 of the ALCS last season. “Collectively we failed to meet our own expectations this season,” Mariners President of Baseball Operations Jerry Dipoto said in a statement.
Early Week 4 fantasy football start/sit
It's never too early to get prepared for the next week in fantasy football. Here's who to start and sit in Week 4.
Game Recap: What went most wrong in Texas A&M’s loss at LSU?
KBTX senior Texas A&M sportswriter Travis L. Brown and sports director Tyler Shaw break down what went wrong and what is the Aggies most urgent fix before they face Arkansas next Saturday.
See Every Celebrity Arrival on the VMAs 2026 Red Carpet
Each look is more head-turning than the next.
Germany has change of plans for next two games
Germany will keep some additional players in camp.
Braelon Allen quiet in Week 3
Jets RB Braelon Allen not a big factor in Week 3 but may join starting line next week
Next Rayan Cherki could be heading to Liverpool
Are Liverpool going to sign the next Rayan Cherki? They’re having a look and might just get a deal done.Liverpool are certainly in the market for a no.10. Or at least, for a no.10-of-the-future. The...
Businesses hope new bus-only lanes on East Colfax will boost business after 2-year construction period
A new bus lane opened Sunday on East Colfax from Broadway to Colorado Boulevard, marking the next step in RTD’s East Colfax Bus Rapid Transit project.
Ballard back at Sunderland after hamstring injury
Northern Ireland's Daniel Ballard will miss the rest of the international window through injury, but manager Michael O'Neill says the Sunderland defender "hopefully" could be back by the next international fixtures in November.
The data center debate
We’ve been warned in the past two weeks that artificial intelligence (AI) may kill us all in the next five to 10 years. Industry leaders have suggested there are dangerous...
The data center debate
We’ve been warned in the past two weeks that artificial intelligence (AI) may kill us all in the next five to 10 years. Industry leaders have suggested there are dangerous...
Jon Watts reportedly set to direct the next 'Star Wars' film
Watts would direct the first of Simon Kinberg's planned Skywalker Saga trilogy, though Disney hasn't greenlit it, THR reports.
NE State welcomes Ukrainian Cossack Dancers on Tuesday
BLOUNTVILLE — Northeast State Community College welcomes the Ukrainian Cossack Dancers for two exciting performances this month at the Blountville campus next to Tri-Cities Airport. The performance take place on
Oliver Moore Deal Sets Tone For Blackhawks’ Next Big Contracts
Oliver Moore's new deal signals a shift for Chicago. See the numbers on Levshunov, Rinzel, and Lardis as the rebuild moves forward.
Maha split shows all is not well with Kennedy’s US health revolution
Republicans worry Make America Healthy Again is an electoral liability while activists claim it has abandoned its values
Burnham: 'Broken social care will in the end break the NHS'
Andy Burnham said the proposed care service would be laid out in detail and put on the ballot at the next general election.
📸 These brothers who played together for their national team
What could be more powerful than representing your country? Doing it alongside your brother! From one generation to the next, several families have seen two brothers wear the same national team shirt ...
Trump, Flock cameras and Florida politics fire up Brevard readers
Editor's Note: The Question of the Week will return next Sunday.
Trump, Flock cameras and Florida politics fire up Brevard readers
Editor's Note: The Question of the Week will return next Sunday.
Hauser Mental Health in Aviation Act Passes the Senate
The Senate passed the Hauser Mental Health in Aviation Act and a medication transparency bill for pilots and controllers. What they change and what comes next.
Hauser Mental Health in Aviation Act Passes the Senate
The Senate passed the Hauser Mental Health in Aviation Act and a medication transparency bill for pilots and controllers. What they change and what comes next.
Hauser Mental Health in Aviation Act Passes the Senate
The Senate passed the Hauser Mental Health in Aviation Act and a medication transparency bill for pilots and controllers. What they change and what comes next.
Isle of Man: Who are the new Members of the House of Keys?
Twenty-four members have been elected to serve in the House of Keys for the next five years - but who are they?
Serbia vs Netherlands – Match preview and team news
Netherlands will continue their UEFA Nations League journey on Sunday as they face Serbia in their next match away from home at the Stadion Rajko Mitić.Serbia vs Netherlands – Match preview and te...
Wales XI vs Denmark – Predicted lineup and team news
Wales are set to face Denmark away from home on Sunday in their next UEFA Nations League fixture at the Parken Stadium.The visitors arrive in Copenhagen amid a difficult run of form, having failed to ...
39 of the best things to do in Cincinnati this week
If you're looking for the best events happening in Cincinnati, you're at the right place. Find your next concert, game, festival or family event.
Business Education Council builds Wyoming County workforce
For businesses across Wyoming County, one question matters more every year: Where will our next generation of employees come from?
“A true business and civic leader,” Jim Ukrop, former CEO of Ukrop’s Markets, dead at 89
For the next 25 years, the 500-square-foot market grew to over 10,000 square feet.
Forget The Next MacBook Pro, Apple Has Something Much More Desirable
Apple will need to introduce a $3,000 MacBook Ultra with an OLED touchscreen to manage rising costs and protect margins without undermining any current MacBooks or iPads.
Saturday Jays Notes
Second-to-last day of the regular season. There isn’t much news. Max Scherzer says he’ll wait until after the season to decide whether he wants to pitch next year, but he’s set to start tomorrow, in front of his kids (just in case). He hasn’t put up numbers that would make me want to re-sign him. […]
VNA Health Names Sena Woodall Chief Operating Officer
Sena Woodall VNA Health has named Sena Woodall, RN, as its next chief operating officer (COO), following the retirement of her predecessor and mentor Jo
Trump to Hold Midterm Political Rally at Choctaw Nation Event Center in Oklahoma
Overview: Mike Mazzei, the Republican nominee for Oklahoma governor, is expected to appear with President Donald Trump at the October 1 midterm rally at the Choctaw Event Center in Durant. The White House announced Friday that President Donald Trump will hold a political rally in Durant, Oklahoma, which is located within the Choctaw Nation, next […]
Trump to Hold Midterm Political Rally at Choctaw Nation Event Center in Oklahoma
The White House announced Friday that President Donald Trump will hold a political rally in Durant, Oklahoma, which is located within the Choctaw Nation, next Thursday, October 1. With polls showing t...
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. [1] Intel, “Intel Tech Tour 2025 Panther Lake recap,” Doc. 866361, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/866361/ITT_2025_Panther_Lake_Recap1.pdf [2] Intel, “Core Ultra processors Series 3 datasheet, volume 1,” Doc. 872188-001, Jan. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/872188/872188-001.pdf [3] N. Horiguchi and E. Beyne, “Backside power delivery: How to power chips from the backside,” imec Reading Room, Nov. 25, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/how-power-chips-backside [4] W. Hafez et al., “Intel PowerVia technology: Backside power delivery for high density and high-performance computing,” in Proc. IEEE Symp. VLSI Technol. Circuits, Kyoto, Japan, Jun. 2023, pp. 1–2, doi: 10.23919/vlsitechnologyandcir57934.2023.10185208. [5] K. Fischer et al., “Intel 18A platform technology featuring RibbonFET (GAA) and PowerVia for advanced high-performance computing,” in Proc. Symp. VLSI Technol. Circuits, Kyoto, Japan, Jun. 2025, pp. 1–3, doi: 10.23919/vlsitechnologyandcir65189.2025.11075006. [6] K.-F. Cheng, C.-L. Teng, H.-Y. Huang, and H.-C. Chen, “Metal oxide composite as etch stop layer,” U.S. Patent 12 176 247 B2, Dec. 24, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US12176247B2/en [7] S. W. King, “Dielectric barrier, etch stop, and metal capping materials for state of the art and beyond metal interconnects,” ECS J. Solid State Sci. Technol., vol. 4, no. 1, pp. N3029–N3047, 2015, doi: 10.1149/2.0051501jss. [8] A. V. Mule’, D. J. Towner, D. Seghete, C. R. Ryder, and A. A. Gonzalez, “Multi-layer etch stop layers for advanced integrated circuit structure fabrication,” U.S. Patent Appl. 20220102343 A1, Mar. 31, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20220102343A1/en [9] C.-C. Wang and J. H. Wang, “Interconnect structure with dielectric cap layer and etch stop layer stack,” U.S. Patent Appl. 20230253247 A1, Aug. 10, 2023. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20230253247A1/en [10] Y. J. Wu, K.-F. Cheng, C.-C. Lee, H.-K. Chang, and H.-Y. Huang, “Etch stop layer for interconnect structures,” U.S. Patent Appl. 20240332070 A1, Oct. 3, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20240332070A1/en [11] M. G. Rainville, N. Shankar, K. S. Reddy, and D. M. Hausmann, “Deposition of aluminum oxide etch stop layers,” U.S. Patent Appl. 20180197770 A1, Jul. 12, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.justia.com/patent/20180197770 [12] J. S. Leib et al., “Conductive lines having molybdenum liner and tungsten fill for advanced integrated circuit structure fabrication,” U.S. Patent Appl. 20240429126 A1, Dec. 26, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.justia.com/patent/20240429126 [13] M. Naik, “Cobalt enables power and performance scaling at single-digit logic nodes,” Applied Materials, Dec. 17, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://www.appliedmaterials.com/us/en/blog/blog-posts/cobalt-enables-power-and-performance-scaling-at-single-digit-logic-nodes.html [14] Lam Research, “Breaking through AI’s invisible barrier with molybdenum,” Lam Research Newsroom, May 6, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://newsroom.lamresearch.com/molybdenum-metallization-ai-revolution [15] P. Yashar, G. Malyavanatham, and H. Vijwani, “Integrated circuit interconnect structures with niobium barrier materials,” U.S. Patent Appl. 20240112951 A1, Apr. 4, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20240112951A1/en [16] Applied Materials, “Applied Materials unveils chip wiring innovations for more energy-efficient computing,” Applied Materials Investor Relations, Jul. 8, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-unveils-chip-wiring-innovations-more-energy [17] Samsung, “Samsung showcases AI-era vision and latest foundry technologies at SFF 2024,” Samsung Semiconductor, Jun. 13, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://semiconductor.samsung.com/news-events/news/samsung-showcases-ai-era-vision-and-latest-foundry-technologies-at-sff-2024/ [18] C. W. Yeung et al., “Channel geometry impact and narrow sheet effect of stacked nanosheet,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2018, pp. 28.6.1–28.6.4, doi: 10.1109/iedm.2018.8614608. [19] S. Mochizuki et al., “Evaluation of (110) versus (001) channel orientation for improved nFET/pFET device performance trade-off in gate-all-around nanosheet technology,” in Proc. Int. Electron Devices Meeting (IEDM), Dec. 2023, pp. 1–4, doi: 10.1109/iedm45741.2023.10413854. [20] D. G. Ouellette et al., “Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer,” U.S. Patent 12 051 698 B2, Jul. 30, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US12051698B2/en [21] imec, “Advancing the CFET-based device roadmap with novel integration modules and standard-cell architectures,” imec, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/advancing-cfet-based-device-roadmap-novel-integration-modules-and-standard-cell [22] A. Reznicek, X. Miao, C. Lee, and J. Zhang, “Wrap around contact for nanosheet source drain epitaxy,” U.S. Patent 11 302 813 B2, Apr. 12, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US11302813B2/en [23] J. A. Kittl, J. G. Hong, D. R. Palle, and M. S. Rodder, “Methods for varied strain on nano-scale field effect transistor devices,” U.S. Patent 9 978 833 B2, May 22, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US9978833B2/en [24] S. Gandikota et al., “Method of reducing metal gate resistance for next generation NMOS device application,” Int. Patent Appl. WO 2024/137272 A1, Jun. 27, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/WO2024137272A1/en [25] J. Zhang et al., “Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2019, pp. 11.6.1–11.6.4, doi: 10.1109/iedm19573.2019.8993490. [26] C. Yoo, J. Chang, Y. Seon, H. Kim, and J. Jeon, “Analysis of self-heating effects in multi-nanosheet FET considering bottom isolation and package options,” IEEE Trans. Electron Devices, vol. 69, no. 3, pp. 1524–1531, Mar. 2022, doi: 10.1109/ted.2022.3141327. [27] S. S. Pradhan, D. B. Bergstrom, J.-S. Chun, and J. Chiu, “Tungsten gates for non-planar transistors,” European Patent Appl. EP 3 506 367 A1, Jul. 3, 2019. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/EP3506367A1/en [28] L. Schloss and X. Ba, “Tungsten films having low fluorine content,” U.S. Patent 9 754 824 B2, Sep. 5, 2017. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US9754824B2/en [29] Intel Foundry, “Accelerating AI and HPC with advanced process and packaging technologies,” Doc. 367370-001US, Jun. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/dam/www/central-libraries/us/en/documents/2025-11/intel-foundry-hpc-ai-brief.pdf [30] M. Lofrano, X. Chang, H. Oprins, and Z. Tokei, “Mitigating the thermal bottleneck in advanced interconnects,” imec, Sep. 28, 2023. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/mitigating-thermal-bottleneck-advanced-interconnects [31] S. Bair, “Intel at ISSCC 2025: Navid Shahriari invited talk, eight papers, forums, panelist & product details,” Intel Community, Feb. 19, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://community.intel.com/t5/Blogs/Tech-Innovation/Edge-5G/Intel-at-ISSCC-2025-Navid-Shahriari-Invited-Talk-Eight-Papers/post/1667592 [32] D. Chandra, E. Potladhurthi, D. R. S. Reddy, and K. S. Rengarajan, “Tunable negative bitline write assist and boost attenuation circuit,” U.S. Patent Appl. 20160203857 A1, Jul. 14, 2016. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20160203857A1/en [33] Synopsys, “Advantages of firmware-based training in high-speed DDR IP,” Synopsys IP Technical Bulletin. Accessed: Sep. 14, 2026. [Online]. Available: https://www.synopsys.com/articles/firmware-based-training-ddr-ip.html [34] N. Muralimanohar, R. Balasubramonian, and N. P. Jouppi, “CACTI 6.0: A tool to understand large caches,” Hewlett-Packard Laboratories, 2009. Accessed: Sep. 14, 2026. [Online]. Available: https://users.cs.utah.edu/~rajeev/cacti6/cacti6-tr.pdf [35] Intel, “Intel Tech Tour 2024 Lunar Lake AI hardware accelerators,” Doc. 824436, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/824436/2024_Intel_Tech%20Tour%20TW_Lunar%20Lake%20AI%20Hardware%20Accelerators.pdf [36] Y.-H. Chen, J. Emer, and V. Sze, “Eyeriss: A spatial architecture for energy-efficient dataflow for convolutional neural networks,” in Proc. 43rd ACM/IEEE Annu. Int. Symp. Comput. Archit. (ISCA), Jun. 2016, pp. 367–379, doi: 10.1109/isca.2016.40. [37] Intel, “Introduction to the Xe-HPG architecture,” Doc. 758306, Nov. 4, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/developer/articles/technical/introduction-to-the-xe-hpg-architecture.html [38] Intel, “Core Ultra processors Series 3 for the edge,” Doc. 855291. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/855291/Intel%C2%AE%20Core%E2%84%A2%20Ultra%20Processors%20Series%203%20for%20Edge%20Overview_2.pdf [39] Intel Foundry, “Foveros technology brief,” Doc. 366411-001US, Feb. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/dam/www/central-libraries/us/en/documents/2025-07/foveros-25d-product-brief.pdf [40] D. Das Sharma, “UCIe: Building an open chiplet ecosystem,” UCIe Consortium, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.uciexpress.org/_files/ugd/0c1418_c5970a68ab214ffc97fab16d11581449.pdf [41] Intel, “Intel launches Intel Core Series 3 processors,” Intel Newsroom, Apr. 16, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-launches-intel-core-series-3-processors-changing-the-game-for-everyday-computing.html [42] Intel, “Core Series 3 launch press deck,” Apr. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://download.intel.com/newsroom/2026/Intel-Core-Series-3/Intel-Core-Series-3-Launch-Press-Deck.pdf [43] Intel, “Intel outlines architectures for agentic AI at Hot Chips 2026,” Intel Newsroom, Aug. 24, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-outlines-architectures-for-agentic-ai-at-hot-chips-2026.html [44] Intel, “Intel accelerates process and packaging innovations,” Intel Investor Relations, Jul. 26, 2021. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/filings-reports/all-sec-filings/content/0001193125-21-224438/d199788dex991.htm [45] Intel, “Intel reports third-quarter 2021 financial results,” Intel Investor Relations, Oct. 21, 2021. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/news-events/press-releases/detail/1505/intel-reports-third-quarter-2021-financial-results [46] Intel, “3rd generation Intel Core processors bring exciting new experiences and fun to the PC,” Intel Investor Relations, Apr. 23, 2012. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/news-events/press-releases/detail/577/3rd-generation-intel-core-processors-bring-exciting
McDonald’s Has a New Growth Strategy. Business Leaders Should Pay Attention
McDonald’s NEXT strategy shows how businesses can use technology, efficiency, and human-centered leadership to drive sustainable growth.
Ken Paxton to bring campaign tour to El Paso. Here’s when and where
Paxton’s “Protecting the Texas Promise” tour is scheduled to stop in El Paso next week. The event is free, though spots can be reserved.
Cattaraugus County Health Department to begin offering influenza, covid vaccination clinics
By RICK MILLER Olean Star The Cattaraugus County Health Department will offer 11 influenza and covid vaccine clinics around the county over the next month. Be sure to bring photo identification and…
US scientists launch workaround after Trump administration dismantles National Climate Assessment
Major scientific groups moved quickly to keep the work alive after the Trump administration dismantled key parts of the federal process behind the next National Climate Assessment.
Opinion | ‘The MAGA Flag Is in Tatters’
This week in politics: Midwest realignment and what’s next for conservatives.
Video: Opinion | Will the Midterms Bring a Political Realignment?
This week in politics: Midwest realignment and what’s next for conservatives.
Qualcomm’s Next Flagship Snapdragon SoC To Target Higher Frequencies Of 5.40GHz While Sticking With TSMC’s 2nm N2P Node, But IPC Gains Are Rumored To Stay Under 10%
Qualcomm’s upcoming Snapdragon flagship SoC aims for a massive 5.40GHz clock speed on TSMC’s 2nm N2P process, though rumored IPC gains remain under 10%
As work requirements kick in for Medicaid, some states are taking a tougher stance
At least six states will require documentation that individuals are too sick to meet Medicaid work requirements kicking in next year.
BYU basketball preparing for Jaxon Kohler TRO ruling next week
Kevin Young navigates a volatile legal landscape as the Cougars await a crucial court decision regarding the eligibility of the Michigan State transfer.
Mt. Carmel claims over time victory against Olney
MOUNT CARMEL, Ill. (WEHT) — The Mt. Carmel Aces beat Olney, 38-30 in over time. The Aces will look to keep the win streak alive as they face Casey-Westfield next week.
The Detroit Tigers May Have their NEXT Justin Verlander
Jackson Jobe struck out eight Pirates over 5.1 innings Friday night, giving the Detroit Tigers another glimpse of their potential future ace.
International Manager Tipped to Become Next Celtic Boss
The international manager has been tipped to replace Martin O'Neill as the next Celtic boss.
GTA 6 Fronts Next Game Informer Cover with New Info and Screenshots
Out on 29th September
Changing the partying landscape: Health and wellness parties to come to fraternity and sorority life across the country
The wellness industry has surpassed a value of $6 trillion dollars this year, according to Forbes. In the saturated wellness market, brands like Marty Moc’s Sweat and Soak is trying to be the next big thing that wellness consumers move toward. Marty Mocs, a 24-year old recent graduate of Liberty University, started his wellness brand...
Clarksville Academy football chooses independent schedule for next 2 seasons
Clarksville Academy football has opted for a independent schedule for the 2027-29 TSSAA cycle due to low numbers.
Dolly Parton recorded a duet with Bono before she died that will be on U2's next album
LOS ANGELES — Friday is Dolly Parton Day and the late country icon remains a gift that keeps on giving. Just months before her death in August at age 80,
How Investors May Respond To AMC Entertainment Stock Stronger Theater Attendance
AMC Entertainment Holdings recently approved changes to its certificate of incorporation to declassify the board, shorten director terms to the next annual meeting, and remove limits on board size, while also arranging large new secured debt facilities and a US$71.75 million shelf registration tied to 25,000,000 Class A shares for an ESOP offering. The combination of a simpler, annually elected board, sizeable refinancing of secured borrowings, and equity made available for employee...
Liverpool could sign Everton's best player next summer
Liverpool haven’t signed a player directly from Everton since Abel Xavier crossed Stanley Park in 2002, but that record could soon be broken. There are always rumours linking the Reds with whoever i...