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Big Ten football power rankings after Week 4
We again saw some surprises in college football for Week 4. Here are our updated Big Ten football Power rankings after Week 4.
Tranche Update on Clean & Science co., Ltd's Equity Buyback Plan announced on September 7, 2026.
From September 7, 2026 to September 28, 2026, the company has repurchased 161,862 shares, representing 2.65% for KRW 500 million. With this, the company has completed the repurchase of 161,862 shares,...
Pixel HiLight will soon get these new features, but will they be enough for Pixel 11 Pro users?
The Pixel HiLight currently offers a limited color selection, but a future update could expand it and add support for Google Messages.
MORNING BUSINESS REPORT: Costco passing along tariff refunds, inflation update, McDonald's Playplaces
Costco passes tariff refunds on to customers, when to expect an inflation update, and McDonald's looks to bring back playplaces. Here's the Morning Business Report for Sept. 19.
UFC Insider Shares Welcome Health Update on Raoni Barcelos
UFC insider Ariel Helwani shared a welcome update on the health condition of UFC fighter Raoni Barcelos after suffering knockout on Saturday. The post UFC Insider Shares Welcome Health Update on Raoni Barcelos appeared first on HEAVY.
UFC Insider Shares Welcome Health Update on Raoni Barcelos
UFC insider Ariel Helwani shared a welcome update on the health condition of UFC fighter Raoni Barcelos after suffering knockout on Saturday. The post UFC Insider Shares Welcome Health Update on Raoni Barcelos appeared first on HEAVY.
Travis Etienne Injury Update is Key News for Saints
Travis Etienne hasn’t gotten his New Orleans Saints career off to a great start. It might be getting worse in Week 3. He appears to have sustained an injury. While the Saints were in the midst of throwing four touchdowns to tight ends (two to Juwan Johnson, two to Noah Fant), Etienne left the field […] The post Travis Etienne Injury Update is Key News for Saints appeared first on HEAVY.
NASCAR Cup Series Standings After Kansas: Full Chase Points Update
Kyle Larson did more than win Sunday at Kansas Speedway. He left the track with a commanding lead atop the NASCAR Cup Series Chase standings. Larson’s victory, his fourth career Cup win at Kansas, capped a massive points day for the Hendrick Motorsports driver. He earned 76 points, the most by any driver in a […] The post NASCAR Cup Series Standings After Kansas: Full Chase Points Update appeared first on HEAVY.
The Witcher 3 Remastered a 45GB PS5 Patch, Release Times Revealed
An update to current PS5 version
Parents-in-law accused of killing Dublin man at sports park
A Dublin man was shot to death in the parking lot of a local sports park Saturday afternoon and his elderly parents-in-law have been booked in jail on suspicion of committing the homicide, city police said in a case update Sunday.
2026 VMAs: How to watch live tonight, updated start time, performers, full nominations list and more
You don't need MTV to watch! Here's how to tune in live to this weekend's star-studded show.
Health Department withdraws proposed regulations for rewrite
The Pennsylvania Department of Health has pulled its 502-page update of regulations, citing a “historically high volume of feedback” during the comment period that ended last week.
NFL Insider Reveals Potential Josh Jacobs Deadline
The Green Bay Packers are still waiting for an update on how long running back Josh Jacobs will be suspended. While NFL Insider Ian Rapoport does not have a definitive timeline for when Jacobs’ punishment will be handed down, he does think there could be a deadline. Rapoport said that he does not expect an […] The post NFL Insider Reveals Potential Josh Jacobs Deadline appeared first on HEAVY.
IVHD Encourages Residents to Take Small Steps Toward ‘Healthy Aging’ This September
Written by Sergio Uriarte. Last Updated September 27, 2026 in Healthcare. (El Centro, Calif.) — In recognition of Healthy Aging Month, the Imperial Valley Healthcare District (IVHD) is encouraging Imperial Valley
Milwaukee Brewers vs. St. Louis Cardinals score, lineups, TV, updates
The Brewers close out the regular season against the Cardinals at American Family Field on Sunday, Sept. 27 with Jacob Misiorowski on the mound.
49ers vs Cardinals live updates: Score, highlights, analysis
The San Francisco 49ers face the Arizona Cardinals in Week 3. Follow live score updates, highlights, injury news, key plays and instant analysis.
Terrible update: Liverpool suffer second major injury
That's two major injuries in two days for Liverpool. A terrible chain of events for Andoni Iraola.Liverpool suffered their first major injury of the international break with news that Alexander Isak i...
Jalen Brunson hosts 'SNL' Season 52 premiere as Weekend Update spoofs Anthropic's Dario Amodei
Knicks star Jalen Brunson hosted the "SNL" Season 52 premiere with help from his teammates, Katseye made its debut and Jane Wickline spoofed Anthropic CEO Dario Amodei.
Saints Get Brock Bowers News Hours Before Raiders Game
The Saints received a significant Brock Bowers update just hours before kickoff against the undefeated Raiders. The post Saints Get Brock Bowers News Hours Before Raiders Game appeared first on HEAVY.
Raiders vs Saints live updates: Score, highlights, predictions, analysis
The Raiders are in New Orleans in a pivotal Week 3 matchup. Follow live score updates, highlights, injury news, key plays, and instant analysis.
Brewers Receive Positive Update on Ortiz's Potential Injury
MRI results reveal that battered Milwaukee Brewers' infielder Joey Ortiz is battling multiple ailments.
Lions vs. Jets: Live score updates, highlights, injury news
Live score updates for the Detroit Lions vs. New York Jets game, with highlights, injury news.
The McBee Brothers & Galyna Saltkovska Share Updates on the Family’s Many Businesses (PHOTOS)
The McBee brothers and colleague Galyna Saltkovska are sharing major updates on the family's farm and businesses today. Read on for more details.
49ers Announce Mike Evans Decision Before Cardinals Game
Mike Evans is expected to be available for the San Francisco 49ers in Week 3, according to Jeremy Fowler of ESPN, with Ian Rapoport confirming the update as well. Mike Evans good to go. https://t.co/FWtPebaDOl — Ian Rapoport (@RapSheet) September 27, 2026 Evans’ Path to Being ClearedEvans left San Francisco’s Week 2 win over the […] The post 49ers Announce Mike Evans Decision Before Cardinals Game appeared first on HEAVY.
This wireless eGPU claims to deliver RTX 5090-like performance over Wi-Fi
WiCi recently began inviting interested parties to sign up for updates about the WiCi One, which aims to become the first successful wireless external graphics card. The...
Nor'easter update: Shore battered by wind, floods for second day
A powerful nor'easter is pounding the Jersey Shore with high winds and floods for a second straight day.
Patriots vs Jaguars live updates: Score, highlights, analysis
The Patriots play the Jaguars in a pivotal Week 3 AFC clash. Follow live score updates, highlights, injury news, key plays and instant analysis.
Dallas Fed gives updates on manufacturing, service and energy sectors
This week's business events include reports from the Federal Reserve Bank of Dallas on some of state's biggest industries.
Browns score vs. Panthers. Live updates from Cleveland's home opener
The Browns open their home schedule against the Panthers. What reaction did Deshaun Watson receive at home from Cleveland's fans. Follow for updates.
Osvaldo’s family shares positive health update after emergency surgery
Daniel Osvaldo’s family say the ex-Roma, Juventus and Italy striker is ‘doing well and is alert’ after emergency surgery on Friday.Osvaldo’s family have provided a reassuring health update aft...
Official UFC Raoni Barcelos health update
The UFC has provided an official update on bantamweight Raoni Barcelos, after he was stretchered out of the cage at UFC Vegas 121.
Official UFC Raoni Barcelos health update
The UFC has provided an official update on bantamweight Raoni Barcelos, after he was stretchered out of the cage at UFC Vegas 121.
Homelessness strategy update, business extensions on Wausau Public Health and Safety agenda
Wausau officials will hear an update Monday on a joint city-county homelessness plan and consider extension requests from two Stewart Avenue businesses.
Homelessness strategy update, business extensions on Wausau Public Health and Safety agenda
Wausau officials will hear an update Monday on a joint city-county homelessness plan and consider extension requests from two Stewart Avenue businesses.
Takuma Inoue vs. Tenshin Nasukawa 2 live results update
Welcome to the live results update for the Takuma Inoue (22-2, 5 KOs) vs. Tenshin Nasukawa (8-1, 3 KOs) rematch! Their bout headlines a Teiken Promotions card at the Toyota Arena in Tokyo, Japan. Fight fans in Japan will be able to catch the action live on Prime Video. The rest of the world will […]
Team Gives Latest Health Update on UFC Fighter Raoni Barcelos
The team of UFC fighter Raoni Barcelos gave the latest health update on their fighter following a frightening scene at UFC Vegas 121.The main event of UFC Vegas 121 ended with a scary situation when Barcelos was finished via fifth-round TKO by Raul Rosas Jr. after a gruelling five-round war that left both men bloodied […] The post Team Gives Latest Health Update on UFC Fighter Raoni Barcelos appeared first on HEAVY.
UFC provides medical update on Raoni Barcelos following scary knockout
The UFC released an official statement regarding the health of Raoni Barcelos following UFC Fight Night 289.
'Huge' - Aurelien Tchouameni to Liverpool transfer update
Aurelien Tchouameni in action for Real Madrid, with Andoni Iraola in a circular inset
Washington falls to Minnesota, 27-24
This story is being updated.
Dan Lanning provides health update on Dante Moore after devastating hit against USC
Moore left in the second quarter of Saturday's contest after taking a hit to the head from USC's Desman Stephens II.
Raoni Barcelos health update: UFC Vegas 121 headliner awake after terrifying fight finish
Some good news has emerged following a terrifying end to UFC Vegas 121. Raoni Barcelos was stretchered out of the Meta Apex in Las Vegas, Nevada, following a bizarre and downright terrifying finish to his main event fight against Raul Rosas Jr. tonight (Sat., Sept. 26, 2026). Thankfully, the first update on the 39-year-old Brazilian […]
Flutter Entertainment (FLUT) Could Be 40% Undervalued On Revenue Beat And EPS Miss
Flutter Entertainment (FLUT) just delivered a mixed earnings update that drew a sharp response from the market, with revenue ahead of analyst expectations but earnings per share falling well short of forecasts. That miss on profitability lands on top of a weak stretch for Flutter Entertainment, with the share price down 18.23% over the past 30 days and falling 61.87% year to date. The 1-year total shareholder return has declined 70.29%, suggesting momentum has been fading as investors...
Meta Launches $1 Million Competition For "Hands-First" Apps Ahead Of VR Glasses
Meta launched a $1 million developer competition for new and updated "hands-first" Quest and VR Glasses apps.
Saturday Sports: Football, soccer, and tennis updates from across the North Country
Here’s a recap of your North Country sports this Saturday.
Qua Moss injury update for Tennessee football vs Texas
Qua Moss suffered an injury while tackling Arch Manning in Tennessee football's game vs Texas on Sept. 26 at Neyland Stadium.
Lions Get Surprisingly Promising Update on $86M All-Pro
Detroit Lions head coach has been ominous when it comes to the potential return of safety Kerby Joseph. During his most recent interview with 97.1 The Ticket, he noted that he was not sure what could change for Joseph to see the field this season. However, NFL Insider Tom Pelissero of The Ringer shared a […] The post Lions Get Surprisingly Promising Update on $86M All-Pro appeared first on HEAVY.
Presidents Cup Saturday scores, live updates: U.S. chips away at International Team lead ahead of afternoon foursomes
OU-Georgia: Live updates, TV details
Availability: The final Southeastern Conference gameday availability report dropped ahead of kickoff with junior defensive lineman David Stone listed as a gametime decision and senior linebacker Kip Lewis set to
Real Madrid provide updates on Kylian Mbappé injury
Having been substituted due to injury during France’s 1–0 victory over Turkey on Friday, Kylian Mbappé (27) has suffered a hyperextension of the posterior joint capsule in his left knee, Real Mad...
🔥 Martial offered, Juventus-Anguissa and Dybala update: today’s news
First weekend break for all international football, with the Nations League taking over from Serie A.Watch the entire Serie BKT live with LaB Channel on OneFootball: subscribe for just €9.99 per mon...
🚨 Alarm in Madrid: medical update on Mbappé injury
A major blow for Kylian Mbappé and Real Madrid.After suffering an injury yesterday during the Nations League match between Turkey and France, Real Madrid has revealed the extent of his problem."Follo...
LIVE! Till vs. Romero Streaming Updates TODAY!
Former Ultimate Fighting Championship (UFC) standouts Darren Till vs. Yoel Romero will take their talents to the bareknuckle boxing ring later TODAY (Sat., Sept. 26, 2026), headlining BKFC 94 from inside Manchester Arena, Manchester, England, streaming live on DAZN. Neither man is a stranger to the bare knuckle boxing scene, as Romero is fresh off […]
Which Galaxy phones are getting One UI 9 and when?
Samsung's One UI 9 is rolling out, slowly. Here's which Galaxy phones get it first, which have to wait, and what's new in the update
NCAA football scores, UNLV at Akron live updates
The Univerity of Akron and the University of Nevada, Las Vegas football teams meet in an NCAA game. Get live score updates and analysis here.
Patriots Week 3 Roster Updates
The NFL season is in its third week. Everyone's favorite teams are playing, and the rosters are changing. For the New England Patriots, there are spots to fill. With all the injuries that have happened so far, someone needs to step up, and someone needs to be a backup for the backup. Who's Filling in […] The post Patriots Week 3 Roster Updates appeared first on Stadium Rant.
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. 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Allen Park — Detroit Lions coach Dan Campbell and quarterbacks coach Mark Brunell met with the media on Friday. Here are the noteworthy items from those conversations. Healthier up front, banged up in the back It’s good news, bad news on the injury front. First, the offensive line is going to be far closer to full strength with starters Blake Miller (knee) and Christian Mahogany (hip) on track to return to the lineup. That provides stability the offense lacked against Buffalo, particularly at right tackle, where backup Larry Borom allowed 11 quarterback pressures and committed a trio of penalties. Subscribe However, with that same unit, veteran Ben Bartch (foot) is likely to miss Sunday’s matchup with the Jets. The left guard competition that’s been ongoing since May has effectively been whichever option is healthy that week. In the back end, safety Thomas Harper (ankle) is also unlikely to be available on Sunday. That leaves the team precariously thin at the position following Avonte Maddox going on injured reserve this week. Christian Izien is expected to get the start alongside Chuck Clark. “Izzy's been working a lot back there and had a full week,” Campbell said. “And he's gotten a ton of work this week, a ton of reps, full-speed reps. ‘This is what you're going to do, this is the calls’ and just dousing him with full-speed reps and he's done a good job this week.” Safety depth is the bigger concern. The team is expected to count on some combination of Jalen Mills, who signed to the practice squad on Monday, Bishop Fitzgerald, the undrafted rookie poached off the Steelers’ practice squad on Tuesday, and rookie cornerback Keith Abney, who doesn’t have experience at safety. “I'll say this about Abney, man, for a rookie, he's a pretty dang smart, conscientious, aware football player that's got a ton of room to really take off,” Campbell said. “…He's young. He's another one, he just needs reps and reps. But, if we need it, that'll be a guy who may have to go in for us.” You can check here for the full injury report, with game designations, later this afternoon. Reflecting on the past Responding to comments made by Jets coach Aaron Glenn this week, Campbell reflected on his earliest days with the Lions, before the coaching staff had been fleshed out and it was just he and Glenn at the facility working through what they wanted things to look like. “It was just he and I in the lab,” Campbell said. The coach said the two would fill the whiteboard that remains in current coordinator Kelvin Sheppard’s office top to bottom with notes about philosophy, coaching style, team identity and the type of players they wanted to target. “He looks different than me,” Campbell said. “I'm taller, I'm whatever. He's quicker. All these different things, man, but we're really the same. I mean we're so much the same. And he's the defensive version, I'm the offensive version. He was my right hand man. …It was fun, man. Those were good days.” Campbell said it was one of the best and worst days of his life when the Jets hired Glenn to be their coach. “AG means the world to me,” Campbell said. “He's one of my dearest friends because I know what he's made of. “…It's because you know you're losing a little piece of you. That's what he meant to me and to us. So, that's hard.” Traits under center A couple of weeks back, Sheppard noted that Brunell had identified Saints quarterback Tyler Shough as the best prospect at the position ahead of the 2025 draft. On Friday, Brunell confirmed his evaluation and explained what he looks for when studying a young quarterback. Here’s the full answer: “Young quarterbacks, you have to look at everything, you know? I look at guys coming out of college just like I look at any free agents that we might be looking at, or guys that we might add to our roster. Do they take care of the ball? Are they on time? How is their decision-making? How are their feet? “It's tough because you look at a college player, you don't understand what they're trying to do offensively, what their reads are, but you can identify when a guy is accurate, obviously, and when the ball's getting there on time. If there are a lot of interceptions, it raises a red flag. And I think with a lot of the spread offenses of what you're seeing, when you see a young player and they're running some pro concepts and he's having to make protection calls, and he's getting the right play out of the run game, and when there's a lot on his plate and he's executing it very well, and he's managing all of that, that really jumps out at you. It’s really hard to find. “That's one thing we saw with Luke Altmeyer. He had a lot of experience. We call it, ‘Hey, he's playing quarterback.’ And what does that mean? It's not just completing passes. It's getting guys lined up, getting the right play, getting the protection call right, just fixing some problems, being able to progress (through reads). And there's still some young guys out there that can do that at a high level, which is good to see.” Regarding Altmyer, who competed for the team’s backup job through the offseason and currently resides on the practice squad, Brunell acknowledged physical development slows once the season starts, because there aren’t reps to go around. However, there’s still extensive mental development that’s ongoing. “The key for him is approach the game as if you're the starter, mentally,” Brunell said. “And that's really all you can do. Approach the game as if you're the starter and be good in the (class)room. You come in alongside Jared (Goff), and you come in alongside Josh (Dobbs) and (do) whatever they need. And if you get an opportunity to talk to Luke, he'll tell you he does have a lot of responsibilities besides just getting donuts for us on Saturday. “For him, it's mentally staying focused, and even though there's really no chance this Sunday of him playing, he has to approach it as if he's taking the first snap and playing the whole game. So what's our game plan? What are our checks? What are we anticipating? And then during the game, we keep him involved as far as looking at coverages and pressures. And so, really, for him, it's just a mental game. And for now, that's all we can do.” Reason for more zone The Lions have significantly increased their usage of zone coverage on defense this season. I asked Campbell if that was a reaction to their personnel or driven by the focus to generate more turnovers, given it can be easier to produce interceptions when you can keep eyes on the quarterback while playing zone. “I think it was a little bit of both,” Campbell said. “We just felt like this would suit us a little bit better up to this point, and then be disruptive and get takeaways, which worked well Week 1. We had two (opportunities) last week against Buffalo we weren’t able to get, but they’re there.” I followed up by asking how much the combination of heavy blitzing with the back end playing zone has contributed to some of the early-season coverage woes, since adding extra players to the pass rush means leaving the coverage short-staffed. “I mean, it’s challenging, and that’s why a lot of the things we’ve done in zone, for the most part, have been to reduce that stress level back there,” Campbell said. “But that also requires the front getting there. And if you don’t get there, we already kind of talked about that, but there (has to be) a trust there.” The alternative, Campbell explained is sending four and it taking longer for the rush to get home, which can create different problems for a defense. “You can bleed yards,” Campbell said about the strategy. “It gets a little longer and it’s dink-and-dunk and run after catch. …So, we do what we think is right by what we feel like our personnel (does well). But also the game plan, who you’re going in to play, the matchups, their offense. “We’re not stuck on one way.” Detroit Football Network is a reader-supported publication. To receive new posts and support my work, consider becoming a free or paid subscriber. Subscribe
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