SCROLL NEWS / DISCOVERY
Search headlines
Find the stories shaping the conversation.
Results for " NAM " 9,289 found 🔀 AI-powered Shuffle
Atlanta's new NWSL team unveils Atlanta City FC name, logo and colors
Atlanta's newest professional sports team now has a name, a phoenix and a date to take the field.
Seedy K’s Pigskin Palaver: Mediocrity, Bon Mots & Bad Woofs +++
Culling the landscape of college football. How Many Syllables Kamario? Couldn’t help myself. It’s an obscure reference to a line in the cult movie classic, “Putney Swope.” I could have titled this “More Cowbell” but I wanted to be subtler than that. Anyhow the Mississippi State Flavor of the Month QB — last name Taylor — […]
Could Potter be England's next breakthrough star?
With Sarina Wiegman set to name her latest England squad on Tuesday, there is one name everyone is talking about - Lexi Potter. Here is why.
A 72-year-old photo is revealing news clues about 'Meretneith,' a powerful woman who may have ruled Egypt 5,000 years ago
An ancient Egyptian woman named Meretneith had a lavish tomb, and on it her name was written the same way as a pharaoh.
Massimo Iorizzo Named Director of NC State’s Plants for Human Health Institute
Horticultural Science Professor Massimo Iorizzo, whose research has delved into the genetics of a veritable rainbow of small fruit and vegetable crops, will lead NC State University's Plants for Human Health Institute.
Massimo Iorizzo Named Director of NC State’s Plants for Human Health Institute
Horticultural Science Professor Massimo Iorizzo, whose research has delved into the genetics of a veritable rainbow of small fruit and vegetable crops, will lead NC State University's Plants for Human Health Institute.
Better Business Bureau explains personalized pricing
Jo Ann Deal with the Better Business Bureau of Monroe joined Good Morning ArkLaMiss to talk about personalized pricing.
Georgia governor's race: Where Bottoms and Jackson stand on health care
Where do Bottoms and Jackson stand on Medicaid expansion and health care access? Credits: Video by Miasarah Lai, Sources: AJC | CSPAN | Riley Bunch / AJC
Fresh Face: Former beauty queen turns nursing frustration into scrubs business
Ramina Ashfaque went from beauty queen to nurse to the founder and chief executive officer of Ashh Scrubs, a line for healthcare workers with sizes from XXXS to 3XL.
NYU Langone named top US health system for 5th year in a row
NYU Langone Health became the first hospital to earn a top ranking from Vizient Inc., the largest U.S. healthcare improvement company, for five consecutive years. Vizient — which evaluates hospital performance based on quality and safety data, patient experience and mortality and infection rates — named NYU Langone the best health system in the United...
MORNING BUSINESS REPORT: Costco passing along tariff refunds, inflation update, McDonald's Playplaces
Costco passes tariff refunds on to customers, when to expect an inflation update, and McDonald's looks to bring back playplaces. Here's the Morning Business Report for Sept. 19.
Femme in STEM event brings hands-on science to Wilmington mall
The North Carolina Aquarium at Fort Fisher brought hands-on science to shoppers at Independence Mall for its annual “Femme in STEM” event.
The Xbox Series X Can Now Play PlayStation 5 Games - Here's How
A modder named Devran Cosmo Uenal has created a special port of the KytyPS5 emulator for Xbox Series X, allowing some PS5 games to be played on the console.
Patients Warn That Mental Health Surveillance Could Undermine Care
A 2024 study found that the use of surveillance-based technology in inpatient and acute mental health settings is rising despite little evidence that New research finds patients and nurses fear video monitoring could undermine therapeutic relationships, compromise privacy and dignity, fuel mistrust, and replace human care with surveillance.
High Tide Named to Report on Business Ranking of Canada's Top Growing Companies for Sixth Consecutive Year
High Tide Inc. ("High Tide" or the "Company") (Nasdaq: HITI) (TSXV: HITI) (FSE: 2LYA), the high-impact, retail-forward enterprise built to deliver real-world value across every component of cannabis, announced today that it placed No. 315 out of 375 companies listed on the 2026 Report on Business ranking of Canada's Top Growing Companies, with a verified three-year revenue growth rate of 66% over the 2022 to 2025 measurement period. Highlighting the Company's increasing profitability profile, Ad
All Aboard Banijay Entertainment’s Landmark MIPCOM 2026 Line-Up
Media and entertainment group, Banijay Entertainment, today unveils its newly combined powerhouse of content for MIPCOM 2026. Celebrating highly anticipated premium scripted staples, versatile next-gen formats, and standout catalogue champions, the business teases the hits set to grace its newly named “Banijay House” in Cannes this October. This year’s line-up is led by gripping legal […]
Völler confirms Klopp will ditch 44-man Germany squad
Jürgen Klopp made a surprising call with his first squad selection as Germany coach, naming 44 players for the four UEFA Nations League matches during this international break and splitting them into...
Honor Magic 9 Pro Max debuts with stylish design, dual 200MP camera, 8800mAh battery
It’s September 28, and Honor debuts the Magic 9 Pro Max with a stylish design and a mesmerizing upgrade over the previous-generation handset. From name and appearance to internal specifications, the company has given a complete makeover to its annual flagship. It’s time to explore the top-tier smartphone. Magic 9 Pro Max debuts as the […]
Sen Kennedy says no living politicians should have buildings named after them after Trump's moves
Sen. John Kennedy has proposed barring living politicians from having buildings named after them as Trump pushes to rename the Kennedy Center.
Castlevania's Iconic Soundtrack Gets Its Own Symphony, Brought to Life by a 25-Piece Power Rock Orchestra
Konami is celebrating Castlevania’s 40th birthday with a special symphony made up of a 25-member rock orchestra that will bring the series’ iconic sounds to fans in Tokyo, London, and Los Angeles.
Arizona defense contractors see business boost as low-cost drones reshape Iran conflict
The war in Iran has driven up gas prices and fueled inflation, but it has also benefited defense contractors, including many based in Arizona.
Arizona defense contractors see business boost as low-cost drones reshape Iran conflict
The war in Iran has driven up gas prices and fueled inflation, but it has also benefited defense contractors, including many based in Arizona.
80% of Americans take (mostly useless) supplements for their health
Nearly eight in ten Americans take at least one pill, powder or gummy in the name of good health, as Pew Research Center’s Emma Kikuchi and Brian Kennedy
The New Health Care Populism
Fear over rising costs is fueling bipartisan motivation to confront drug companies, insurers, and pharmacy benefit managers directly, with candidates on both sides racing to appear stronger on those areas than their opponents rather than litigating the Affordable Care Act. Republicans have been espe
Haverhill Chamber Names Damark Woodcraft Business of the Month
Damark Woodcraft of Haverhill is the Greater Haverhill Chamber of Commerce’s September business of the month. The company, formed more than 35 years ago, makes hand-built custom furniture, kitchens, doors and more. It helps clients design homes, offices, restaurants and other settings. Mark Brady, owner and president, incorporated the business with his father in 1991.
Newly Identified Frog-like Creature Named by Student Scientists After Their Moms
A newly identified frog-like creature that lived before dinosaurs has been named—by 2 student scientists who discovered it— after their moms.
The best and worst moments from the 2026 MTV VMAs
The iconic MTV awards show brought out music’s biggest names for its 42nd annual ceremony.
Flavio Bolsonaro: political heir in his father's shadow
Flavio Bolsonaro inherited his father's surname and powerful political base.Michelle Bolsonaro accepted a public apology from Flavio Bolsonaro, but did not appear at any of his rallies.
Barbour Community Health psychologist wins statewide award for school-based mental health work
The West Virginia Psychological Association named Dr. Casey Jo Cottrill of Barbour Community Health Association its 2026 Early Career Citizen Psychologist for her work expanding behavioral health care in rural schools.
Fauquier Health hosts ‘Pink with Purpose’ on Oct. 6
The event will feature a "Pink marketplace" with local artisans, crafters and vendors selling a wide variety of items, including jewelry, ornaments, beauty care, gifts and home goods.
See the brilliance: Dunn artist creates and sells glass artwork that shines brightly
Cindy Akers-Gilford creates stained glass, fused glass, mosaics, handmade glass jewelry, pendants, suncatchers and other original glass artwork in her studio in Dunn, N.C. Photos provided by Cimply Broken.Self-made Artist and Founder of Cimply Broken, Cindy Akers-Gilford is helping people “see the brilliance” in all things with her glass artwork. Akers-Gilford started her business right after she retired from 20+ years as a civilian contractor at Fort Bragg. The official opening date for Cimply Broken was Nov. 8, 2021.“It’s been quite the adventure ever since. Not only did I have to learn how to manage a small business, but I’ve never taken a class in stained glass or anything I currently do,” shared Akers-Gilford. Her work includes stained glass, fused glass, mosaics, handmade glass jewelry, pendants, suncatchers and other original glass artwork.“I chose glass art just by happenstance. I saw a video on YouTube with a gentleman using plates and resin to make beautiful windows. I used that idea and created a simple picture frame-sized piece for myself. It was beautiful. I put it up in my window and pretty much forgot about it for a few days. Well, one beautiful sunny morning I went up to my studio, and the sun was rising and the light was shining beautifully through that piece. It was absolutely stunning. I thought that it was the perfect reflection of how God’s light shines through each of us. It was broken glass, so it changed ever so slightly as the sun continued to rise in the sky. I thought it poignant – like each of us – we all shine bright and differently in God’s glorious light, and we are all simply broken as well. We are all made beautiful in his light,” explained Akers-Gilford.The name of the business was inspired by the artist’s name and her faith-driven mission. “Simply became ‘Cimply’ as a play on my name and ‘simply’… and ‘Broken’ because we are all Cimply Broken – but each of us is beautiful,” added Akers-Gilford.Akers-Gilford sells her glass art at the Dunn Farmers Market when the weather is bearable, but mostly from her website at www.cimplybroken.com. “I enjoy getting lost in the creative process. I work out of my home, and I often compare my studio to Walmart returns after Christmas time. It’s hectic, busy and there are always at least 10 things being created simultaneously- it is fun!” shared Akers-Gilford. Her goal for the business is to continue to watch customers as they spot a piece of work from a distance and walk up to it in awe. “That is my biggest joy! I don’t speak to them until they speak – that is their moment to ‘See The Brilliance,’ which is my moniker,” shared Akers-Gilford. She also shared she would love to someday become part of an artist collective in Dunn.
Art that serves others: How a Harnett County muralist is making a lasting mark in her community
Van Goat Studios, which has been operating since 2019, has allowed Johnson to express herself and reflect the spirit of local communities through murals. Photo provided by Elyse Johnson.Elyse Johnson of Van Goat Studios in Dunn wants to spread her artistry and make a lasting mark in her community. Van Goat, which has been operating since 2019, has allowed Johnson to express herself through murals and decorating electrical boxes in the urban landscapes of North Carolina. On top of traditional mural painting, Johnson offers what she calls “portable murals,” an option tailor-made for structure owners who do not want to commit to a design for their wall.“A contractor builds a framed piece of wood, and then they can frame the ‘mural’ onto the wood, whether it’s into their building, whether it’s interior or exterior,” Johnson said. The beginnings of Johnson’s journey into establishing Van Goat Studios reflect the teachings she wants artists to take away today: everything is a learning opportunity. When she started Van Goat, she shared it was a joint venture with a business partner. “I mainly did that because I didn’t feel like I was ready to go and do this on my own,” Johnson said. Her business partner eventually dropped out of the project, deciding she wanted to pursue other forms of art. That is when Johnson was thrust into growing her business on her own during and in the aftermath of the COVID-19 pandemic. “I had built up my confidence enough to go out and reach new heights,” she said. “And I was probably one of the few that benefited from COVID.”The moment presented a silver lining for Johnson. One of her first projects was a Farmers Day mural for the town of Coats. “When COVID-19 hit, Coats was not able to hold their annual festival, so they had a little bit of savings. They decided they wanted to do something for their community without getting anyone sick,” Johnson said.From there, word of mouth spread. Now, Johnson has an organic way of approaching projects. “Like a lot of muralists, if I feel inspired by a building, I will just go up and talk to that building owner and tell them a mural is something they should consider,” Johnson said. But above all, Johnson says she wants art to be accessible to everyone. Johnson said she is trying to stick to projects that benefit “the little guys.” “I’m not trying to go for a project in downtown Raleigh to get the eight-foot-tall building,” Johnson said. “I’m not trying to go to those major cities and get those huge buildings for two reasons: one, I don’t want to go that high; two, my passion really lies with the small guys.” But due to financial constraints and the material reality of art commerce, that requires open communication, she added. “I don’t want to just snowball you with this huge price, and then you just shut me down because it wasn’t what you were thinking,” Johnson said. “At the same time, I am an advocate for the arts, so I’m not going to give you a $10,000 mural when you’re only going to pay $5,000.” There is a healthy balance in explaining the artistic process and working with clients and the surrounding community, Johnson said.“Your municipality invested this, and this is why they invested this, and this is how it’s going to help and improve your community,” she noted. “Same thing when I’m talking to a small business. You asked for me to come at you with this that is outside your budget. How do we make this still your same exact goal, but within your budget lines?” Johnson also provides lessons to aspiring artists. She does so with a mission: how do you master the balance between being a great artist and a competent business owner? “We still do art lessons, but I’m also going to give you business scenarios,” she noted.One of the scenarios she has come up with for her students is a T-shirt competition. “The kids have to think about ‘okay, I can’t just draw whatever I want on a T-shirt. I need to think about what colors Miss Elyse likes. What does Miss Elyse’s logo look like? What would Miss Elyse like?’” Johnson said. “So the design needs to be around that kind of concept.” As Johnson looks toward the future of Van Goat Studios, she is thinking of time, longevity and succession. Johnson is a new mom, which she said has shaped how she sees the future of the studio.“I still want my name and my business out there continuing, so that when my daughter is of age and she can be more independent, then I can be out there doing more and more,” Johnson said. “I would love to get a student to pass this on to, or an intern. I would love for this business to be passed on to the next generation and let them go.”
SDSU Weed Science Teams Compete in First-ever Contest, Graduate Team Finishes Second
BROOKINGS, S.D. -- The South Dakota State University Weed Science graduate team placed second in the Western Society of Weed Science category at the North...
Inter Club: a special day in Pesaro
A day filled with emotion, spent together in the name of a shared love for Inter and the Nerazzurri colours. This was the Inter Club event held in Pesaro on Sunday 27 September, which brought together...
Beloit Sky Carp event fundraises for first responder mental health initiatives
Families enjoyed a day of filled with games, food, live entertainment and community spirit, all in the name of supporting our first responders.
Health department recognizes National Suicide Prevention Month
The Florida Department of Health in Monroe County recognized National Suicide Prevention Month during its recent All Staff Day, highlighting the
Glenwood Behavioral Health Hospital shares key warning signs of suicide, how to get help
Glenwood Behavioral Health Hospital shares key warning signs of suicide, how to get help
Ye Honors Late Mother Donda at Chicago Street Naming Ceremony in Her Honor
Dr. Donda West died in 2007 at the age of 58.
Kennedy suggests ‘rule’ that no politician should have a building named after them while alive
GOP Sen. John Kennedy (La.) said Sunday that public officials should not have buildings named after them while they are alive, as President Trump fights to rename the Kennedy Center after himself.&…
Juventus star is in line to earn a new contract
Francisco Conceicao is one of the first names on the teamsheet at Juventus at the moment and has consistently been one of their most reliable players. The Old Lady therefore expects to have him in the...
Bengals announce inactives for Week 3 vs. Steelers
The Bengals have one big name on the inactives list before Week 3 vs. Steelers.
Trump's golf tour takes him back to the Presidents Cup
President Donald Trump is headed back to the Presidents Cup for the second time. It's the fourth time this year for Trump to be at a golf tournament. He says
The CTE conversation: What science actually knows (and what we don’t)
Brain injury fears are reshaping youth athletics, but scientists say the CTE conversation is missing key facts.
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
Multi-pronged plan to provide mental health resources for returning Vt. servicemembers
2006 Film, Turned Down by Denzel Washington, Named One of the 'Best Thriller Movies of All Time'
[Science Through Covers] Young orangutans learn ‘spoon-feeding’ through lessons and review
Max Planck and UNAS track 12 Sumatran orangutans for 8.75 years to reveal social and individual learning dynamics
5 Affordable Digital Gadgets That Can Fit On Your Keychain
As the name suggests, keychains naturally carry keys, but they can also fit a host of digital gadgets, including power banks, retro gaming consoles, and more.
Business People
Arvest Bank announced it has named Leo Cantu community bank president for the bank's Russellville and Clarksville markets. In his new role, he will provide leadership and day-to-day direction for the bank's operations, serving businesses and organizations throughout Pope and Johnson counties.
People in Business: Variety appoints; City Museum names; Saint Louis U-Madrid appoints
Catch up on local business appointments, awards and hires.
HCA Florida hospitals celebrate Hispanic Heritage with family health event
HCA Florida Healthcare hospitals are celebrating Hispanic Heritage. Hospitals in Ocala and West Marion hosted a family health and wellness event at the Silver Springs Shore Community Center.
Patriots ST coach reacts to underrated rookie's instant success
Patriots special teams coordinator Jeremy Springer has been impressed by rookie linebacker Namdi Obiazor.
Cavan Sullivan makes USMNT history with first start
By Ari LiljenwallCavan Sullivan's rapid rise has reached the international stage.The 16-year-old Philadelphia Union homegrown midfielder was named to Mauricio Pochettino's starting XI during Saturday'...
PCOC (CO-OP) Girls Varsity Volleyball vs. CASLV
On 9/26, the Pacifica Christian/OC varsity volleyball team won their neutral tournament match against Coral Academy of Science Las Vegas (Henderson, NV) by a score of 2-1.
🚨 BREAKING: Czechia & Croatia name XIs for Nations League opener
UEFA Nations League play is underway across Europe during an extended international break, with an intriguing clash between Czechia and Croatia set to unfold in Prague. Czechia comes into tournament p...
No breakthrough AI agreement between Trump and Xi during US-China summit
President Donald Trump and Chinese leader Xi Jinping did not appear to make AI agreement, but Trump says they both like idea of changing its name.
Behold the horrors of DLSS 5, NVidia's real-time AI graphics improver
DLSS 5 is Nvidia's AI-powered tech for dynamically repainting video game scenes in real-time, with more realistic lighting, textures and geometry. Controversial enough on recent games, where it succeeds (more…
VNA Health Names Sena Woodall Chief Operating Officer
Sena Woodall VNA Health has named Sena Woodall, RN, as its next chief operating officer (COO), following the retirement of her predecessor and mentor Jo
Castlevania celebrates turning 40 by giving away the original game for free
Konami is giving away the original 1986 Castlevania for free to mark the series' 40th anniversary, alongside deep sales and a new game, Belmont's Curse.
Week 4 Predictions: Huskers at Spartans
Mike: The exhibition season is OVAH. Jarek: It’s the fourth week of the season and we’ve played teams who’s colors are green or had “green” in their name. Jill: Just casually dropping in (finally) in Week 4. It’s time for some B1G football!! Andy: So Northwestern – are they for real? UCLA (-1.5) at Maryland […]
Zidane fever grips France
In the months between the 2024 Euros and the 2026 FIFA World Cup, there was a malaise that gripped the French public, who became less enamoured and more ambivalent towards their national football team...
Leverkusen's Rising Star Names Ibrahim Maza As His Role Model
Gabriel Minutillo eyes a first-team breakthrough, mirroring the creative flair and defensive work rate of his idol to forge a path alongside the Algerian playmaker.
Johnson County business news: Sept. 26
Community Health Network names three executive vice presidents
Intel Panther Lake Teardown, 18A, BSPD, GAAFET, SemiAnalysis STEEL
Panther Lake debuts the first commercial implementation of backside power delivery (BSPDN), introduces Intel’s first iteration of gate-all-around (GAA) transistors, and showcases their advanced packaging capabilities with its Foveros-S assembly. With Panther Lake, Intel’s manufacturing arc has shifted from nebulous roadmaps to shipped silicon, a significant milestone on their long road back to competitive semiconductor manufacturing. To evaluate the extent of Intel’s comeback, we tore down Panther Lake. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Our teardown traces 18A from its four-sheet RibbonFETs (Intel’s marketing name for GAAFETs) and gate stacks through contacts, frontside and backside wiring, and the bonded carrier. We explain how these material and integration choices improve gate control and reduce resistance, while adding capacitance, thermal resistance, and process complexity. Our measurements put Panther Lake’s 18A compute logic and TSMC N3E GPU logic at similar logic density. However, 18A does not lead TSMC N3P, N2 or Samsung SF2 in peak density. Panther Lake’s CPU cores are incremental updates, and the high-end GPU still uses TSMC N3E. Panther Lake assembles one compute tile, one GPU tile, and one I/O tile atop a passive base tile using Intel’s Foveros-S advanced packaging. Both compute tile variants use Intel 18A. The Xe3 GPU options are a 4-core GT1 tile on Intel 3 and a larger 12-core GT2 tile on TSMC N3E. Both I/O tile variants use TSMC N6. [1], [2] Our analysis centers on the PTL-U compute tile, both the 4-core and 12-core GPU tiles, as well as the 12-lane I/O tile. In conventional chips, power and signal are routed through the same frontside metal stack towards the device frontend. Power rails consume scarce routing resources near the transistors, while tall via stacks carry VDD and VSS from the coarse upper wires to local rails. Backside power delivery (BSPD) moves the main power network behind the transistor layer, to the backside, separating it from frontside signal routing. We covered BSPD and its impacts in 2024. [3], [4], [5] Intel’s BSPD implementation, branded as “PowerVia”, routes power through dedicated backside metals to nano-TSVs, which connect those rails to local source/drain (S/D) contacts. Implementing that separation requires Intel to build the interconnect stacks from both sides of the wafer. The frontside comprises the M0-M14 signal stack, while the backside comprises the BM0-BM5 power stack. M0 and BM0 are closest to the transistors. The nano-TSVs connect the two sides, but Intel patterns and etches each via from the front after forming the contacts. A narrow via runs from the side of the contact deep into the silicon substrate. Intel then completes the frontside signal metal stack, bonds the wafer to a carrier, flips it and removes the original substrate until the buried via tips are exposed. The backside metal stack is then deposited directly on the revealed vias. The nano-TSV and backside-via profiles taper in opposite directions because Intel forms them from opposite sides of the wafer. The transistor structures form the FEOL. Local contacts and nano-TSVs connect them to the wiring. M0 begins the frontside interconnect stack. The silicon carrier remains attached above the frontside interconnects. It supports the device wafer during substrate removal and backside processing and remains part of the finished chip’s thermal path. PowerVia removes the main power distribution from the congested frontside metals, routing supply through shorter and wider backside wires. Its lateral landing still occupies area in the standard cell, so it recovers less cell area than a direct backside contact. [3] Nano-TSVs beside the logic devices carry VDD or VSS from the backside power network, while signal connections continue upward through the frontside metals. Backside Interconnects Samsung SF2 data is included for comparison to Panther Lake’s within this article. SF2 is the incumbent GAA foundry node but lacks BSPD, serving as a useful reference to evaluate 18A. A full teardown of Samsung’s S26 products, processed on SF2, will be shared soon.Nanosheet-cut EDS comparison. The PowerVia supply path runs from the backside Cu rails through Mo-lined W nano-TSVs to the local transistor contacts. In this cross section, the tapered connection spans roughly 150 nm from the contact level to BM0. The Ta liner confines Cu and promotes adhesion to the surrounding stack; the AlOₓ etch stop controls the next dielectric etch above the rail. Dielectric beneath the ribbons electrically separates the devices from the backside wiring and removes the conducting silicon body below the channel. [6] AlOₓ serves as an etchstop (ES), enabling endpointing and protecting the underlying layers. Low-volatility aluminum fluoride reaction products resist the fluorinated plasma, allowing a thin AlOₓ film to protect the metal while the surrounding low-k dielectric is removed. [6], [7]. While the BM0 and layers above the M1 lines show double AlOx layers, Our SMIC N+3 teardown showed single AlOₓ layers. SMIC uses a simpler local AlOₓ substack, while the remaining cap and etch sequence provide the required landing protection. So why double layers? The closely spaced AlOₓ doublets provide two protected endpoints in the etch sequence. Intel documents an AlOₓ/SiN/AlOₓ stack that explains the benefit. The main dielectric plasma etch stops on the first AlOₓ film; a selective wet clear opens that film; a second plasma etch removes the intermediate SiN and stops on the second AlOₓ film. The final wet clear exposes the metal landing surface. SiN is the intermediate dielectric in Intel’s published example. [8] The second stop protects the metal through a cap breakthrough. Wide openings can etch faster than narrow ones, and etch depth varies across the wafer. Metal under an early-clearing opening would otherwise be exposed while other openings still need more etching. Staged protection widens the process window and reduces metal erosion, corrosion and void formation. [8] TSMC documents AlN/AlOₓ/SiOC/AlOₓ above Cu, with AlN blocking Cu diffusion, and a simpler AlN/SiOC/AlOₓ variant that omits one AlOx film. [9] Levels with different opening sizes, aspect ratios, pattern densities and cap materials need different etch margins. A double AlOx stop is useful where another protected endpoint justifies the added processing. The extra film adds formation, selective opening and cleaning steps, plus another set of interfaces to control adhesion, moisture, and stress. These blanket films are opened through the existing via pattern, so each film does not require another lithography mask. AlOₓ adds parasitic capacitance when it replaces lower-k dielectric; two thin AlOₓ films can nevertheless contain less AlOₓ than one thick film. Total thickness, placement, and theintermediate dielectric determine the electrical cost. Deposition chemistry also changes AlOx permittivity and residual hydroxyl content, which can oxidize the underlying metal. [7], [8], [10], [11] The backside stack separates into relatively fine BM0-BM2 wiring near the devices and coarser BM3-BM5 power distribution. The largest pitch increase occurs between BM2 and BM3. BM0’s pitch closely matches the logic-row height, fitting local power delivery to the cell rows. Higher levels aggregate current through larger conductors: routing density becomes less important than low resistance and current capacity as the network approaches the package. This hierarchy provides wide power wiring for the power delivery network without consuming scarce frontside signal-routing resources. [3] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Frontside Interconnects Intel 18A combines Mo-lined W contacts and nano-TSVs with a separate backside Cu power network. Samsung SF2 keeps power on the frontside, using Ti-based contact interfaces and Ta-based barriers and Co liners around Cu wiring. In 18A standard-cell rows, backside power rails supply the devices through nano-TSVs within the cells, freeing frontside routing resources. Samsung’s M0 accommodates both power and signal connections. From the device toward M0, the connection runs through a Ti-based S/D interface, W contact fill, a Mo-lined W via, and the Cu M0 wire. Mo supplies a conductive nucleation and adhesion layer for W, replacing the resistive TiN liner used in conventional W integration. This increases the effective conduction volume within the feature while retaining W fill and its established polishing, cleaning and etching processes. Intel’s Mo/W patent describes this integration tradeoff. The nano-TSV uses the same Mo-lined W construction in the backside supply path. [12] The move from TiN to Mo is an incremental change. While a full Co or Mo fill can also reduce the volume lost to liners in very small features, it requires new integration schemes that increase complexity and risk. Cu remains attractive for wider wires due to its low resistance. As wires and vias shrink, the diffusion barrier consumes an increasing fraction of their cross-section. [12], [12], [14] Intel uses Co/Ru liners at M0-M1, Co at M2-M4, and Nb at M5-M9. The lower-level liners help Cu adhere and reduce void formation during trench fills. Applied Materials’ Endura has new thermal control that facilitate wetting process, so the thin film continuity is good enough that good capillary pressure will drive Cu atoms to the via bottom without voiding. Intel’s choice to use Nb is particularly interesting. Intel’s Nb patent describes a conductive diffusion barrier intended to reduce the barrier’s contribution to resistance relative to conventional Ta-based barriers, particularly at via bottoms where all current crosses the barrier. The patent pairs Nb in coarser levels with the option of lower-cost PVD processing. [15], [16] The upper metal layers support thicker barriers formed through physical vapor deposition (PVD) despite its worse coverage and uniformity. Meanwhile, the lower metal layers require thinner barriers deposited through conformal atomic layer deposition (ALD). Co/Ru adds another material interface and requires controlled deposition and Cu fill. Changing liners and barriers by metal layer allows Intel to optimize interconnect resistance, process complexity, and reliability. [15, 16] RibbonFET, Intel’s name for its gate-all-around FETs (GAAFETs), replaces the FinFET’s vertical fins with four stacked horizontal silicon nanosheets, allowing the gate to surround the channel on every side. The path to GAAFET begins with the planar transistor. A planar MOSFET places the gate above the channel between its source and drain. Pairing an NMOS with a PMOS transistor creates a CMOS inverter, in which the NMOS pulls the output low for a high input, and the PMOS pulls it high for a low input. The gate must retain electrostatic control of the channel to ensure clean switching. As gate lengths shrank, the drain began to compete with the gate for that control, increasing off-state leakage. Electrostatic control was restored through an architectural evolution that raised the channel into a vertical fin and wrapping the gate around three sides. Called “FinFET”, this new architecture packed more effective channel width into a smaller footprint. Further scaling made it harder to maintain both drive current and leakage within smaller cells, and reintroduced the same problems planar MOSFETs faced. Nanosheet GAAFETs close the fourth side by replacing the vertical fin with a stack of horizontal nanosheets, each surrounded by the gate. The tighter electrostatic control suppresses leakage at shorter gate lengths while stacking adds effective channel width within the cell footprint. In a FinFET process, channel width changes in discrete steps as designers must add or remove whole fins. Nanosheet width can instead be adjusted continuously within the process’s design rules. Wider sheets increase drive current, while narrower sheets reduce capacitance at the cost of drive current. Intel 18A uses stacks of four nanosheets each and varies their widths across logic and SRAM. At the process level, adding more sheets to each stack increases effective channel width and drive current, but complicates fabrication. RibbonFET vs MBCFET Samsung began GAAFET production in 2022 with SF3E, following with SF3 and now SF2. Its ‘MBCFET’ provides a useful structural comparison with Intel’s first RibbonFET implementation. [17] STEEL is digging deeper into SF2, used in the Exynos 2600, and TSMC’s GAAFET N2, used in Apple’s A20 Pro, in upcoming newsletter articles. We’re throwing some teasers on X. Let’s compare Samsung SF2’s MBCFET with Intel 18A’s RibbonFET. Subscribe Even to the untrained eye, Intel’s extra nanosheet is obvious. Intel stacks four ribbons to Samsung’s three. Samsung’s sheets are much wider in these fields, so both sheet count and width matter to the available channel perimeter. Sheet width also changes which silicon surfaces carry current. On conventional (001) silicon, wide nanosheets emphasize the broad top and bottom surfaces, favoring electron transport; the larger sidewall contribution in a narrow sheet favors hole transport. Thinner sheets improve gate control but increase confinement and scattering. This makes width and thickness part of the NMOS/PMOS balance, alongside strain and threshold voltage. [18], [19] GAAFET designs like 18A use different work-function-metal (WFM) stacks for NMOS and PMOS. Around each ribbon, a thin SiOx interfacial layer separates the silicon channel from the HfOx high-k dielectric, with La providing dipole tuning and the WFM wrapping the dielectric. NMOS uses a TiAl-based stack, while PMOS uses TiN WFM. W fills the remaining gate trench, providing a lower-resistivity path where the work-function layers are no longer needed. In this field, the PMOS stacks leave room for W between ribbons, while the NMOS stacks occupy more of those gaps. A silicon-based dielectric marks the P/N boundary, allowing the PMOS and NMOS gates, sharing the same gate trench, to be processed sequentially. Fast logic paths, retention circuits, and SRAM need a family of threshold options. Changing threshold without substantially changing device dimensions, capacitance or fabrication complexity is valuable. FinFET processes typically use different work-function-metal stacks. In a four-ribbon GAA stack, the narrow sheet-to-sheet gap limits how much WFM can fit around each channel. La in the gate dielectric creates interfacial dipoles at the SiOx/HfOx boundary, shifting effective work function and tuning threshold voltage. This gives Intel another control alongside its NMOS and PMOS WFM stacks. Low-threshold devices improve critical-path drive; higher thresholds reduce leakage elsewhere. Dipole tuning is especially useful in GAA because it changes threshold without consuming the narrow intersheet gap with thicker WFM. Precise control of La incorporation, diffusion and interface quality has long been a challenge, limiting viability in high volume production but is now seen from every leading-edge foundry. Intel’s patent describes depositing a dipole-forming oxide above HfOx and annealing it toward the interfacial oxide before completing the work-function and fill metals. This separates threshold tuning from the space available for metal. Newer research addresses the thermal cost: imec’s 2026 dipole-middle research inserts the shifter between two HfOx depositions, shortening the diffusion path while protecting SiOx during patterning. [20], [21]Matched-cut EDS, Intel 18A (left) vs. Samsung SF2 (right). Intel retains raised source/drain epi beneath its contacts, while Samsung recesses W deep into the epi to form a V-shaped Ti-lined interface. The deeper contact increases metal-to-semiconductor area and shortens the current path from the lower sheets, reducing contact and spreading resistance. It also removes epi volume and brings the contact etch closer to the channel ends. Retaining more epi preserves the material available for strain transfer, especially from SiGe into PMOS. These geometries balance contact access against stress engineering and etch margin. [22], [23] Samsung stacks three sheets to Intel’s four ribbons, and both processes use sheet width to tune drive strength. In our Samsung cross-sections, widths range roughly from 19 to 30 nm in the NPU rows and 37 to 50 nm in the CU cell. The Samsung nanosheets taper, with the widest sheet at the bottom and the narrowest at the top. Both processes use HfOx gate dielectric and Ti-based work-function stacks, with Al in the NMOS stack. In the Samsung devices shown here, the dielectric and WFM occupy the intersheet gaps, leaving W above the top sheet. Intel’s PMOS stack leaves more room between ribbons, and W fills those gaps while the thicker NMOS stack leaves W mainly in the upper trench. Gate-stack EDS maps. The W between Intel’s PMOS ribbons provides a conductive path close to the lower gates. Where WFM fills the entire gap, the gate still surrounds the channel, but voltage reaches it through the more resistive work-function films. Thinner WFM and dipole tuning preserve room for low-resistivity fill; Mo and Ru are alternative fill metals being developed for further scaling. [24] A masked, sequential WFM flow explains the different gate heights and inter-nanosheet fill. The proposed sequence below shows how separate NMOS and PMOS work-function steps produce that geometry. Enabled by the BSPDN process, Intel replaces the dense-logic silicon subfin with dielectric, removing the parasitic conduction path below the ribbons and reducing substrate-related capacitance. A retained silicon body as in classical, non-SOI, planar and FinFET designs needs junction and punchthrough-stop engineering to suppress leakage. Dielectric isolation makes that leakage less sensitive to the subfin doping profile but adds removal and fill steps. It also weakens the direct thermal path through silicon, making the contacts, metal stacks and package more important for heat extraction. [24], [26] Fluorine is concentrated around selected Intel device structures in the maps. WF6 is a standard precursor for W nucleation and fill, while barrier films protect adjacent dielectrics from fluorine attack. Low-fluorine W processes reduce the residual-F burden. Chloride-based precursors avoid introducing F during W deposition, but require control of chlorine attack, nucleation and fill quality. The integration target is a continuous, low-resistance W path with a thin protective liner and minimal chemical damage to the surrounding stack. [20], [27], [28] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. We measured cell height, gate pitch, metal geometry, and ribbon dimensions at the XTEM sites shown below. The tables group these dimensions by site and device polarity. Our “sheet cuts” cross the silicon channel and show the ribbons end-on. “gate cuts” run along the channel through successive gates. The 18A logic cell dimensions point to a five-track logic library while the N3E and Intel 3 cell dimensions evidence a seven-track logic library. The DDR-PHY uses wider M0 wires and much larger spacing than core logic. That trades routing density for lower wire resistance and weaker coupling between neighboring nets. The geometry suits the current delivery and coupling requirements of analog, clock, and I/O circuitry. PowerVia lets 18A combine a compact cell height with wider M0 geometry by moving the main power rails off the signal-routing tracks. That relaxes local wire scaling while preserving a small cell footprint. Cell height and gate pitch set the geometric density; pin access and routability determine how much of it a real block can use. [29] The biggest takeaway from our gate-pitch measurements is that Intel 18A compute logic and TSMC N3E GPU logic have similar density in the Bohr representative-cell model. The 18A example is 18.6% denser than the Intel 3 GPU example. Gate pitches are nearly identical across the three sites, so cell height drives most of the difference. The Bohr model combines a four-transistor NAND2 spanning three gate pitches and a 32-transistor scan flip-flop (SFF) spanning nineteen pitches, weighting their densities 60:40. The sensitivity column shows how independently changing cell height and gate pitch by ±1 nm changes the result. This compares representative cell geometries; whole-die density also depends on cell mix and placement. The 18A P-core gives M0 substantially more metal cross section than the N3E vector engine. Treating each profile as a trapezoid gives 2.63 times the area per line and 1.84 times the area after normalization by routing pitch. The larger section reduces the geometric contribution to line resistance and lowers current density for a given current. Taller and wider wires also add capacitance, so circuit delay depends on the balance of resistance and capacitance. The DDR-PHY has less metal area per routing width than the 18A core fields, while remaining above N3E. [30] Area = height × (top CD + bottom CD) / 2, including liners. Area/pitch normalizes by routing width. Taper is the symmetric sidewall angle from vertical, with the largest angle belonging to the DDR-PHY. Compute tile The measurements show how ribbon dimensions and gate-stack geometry vary across the compute tile and between NMOS and PMOS to balance channel drive, gate load and the space needed for the dielectric/WFM stack across logic, SRAM and the DDR-PHY. Width mainly changes available channel perimeter; thickness also changes electrostatic control and carrier confinement. Gate-stack thickness then determines the space left for low-resistivity fill P-core and LP E-core logic Both the P-core and LP E-core use multiple nanosheet widths. Widths are measured on high-magnification XTEMs while wider-field images demonstrate additional width choices within the LP E-core. Multiple widths are expected even within an LP E-core. Timing-critical paths, buffers and cells with different fanout need different drive strengths. The lower-magnification fields show this width diversity beyond the sites quantified in the table. L2 and L3 SRAM GAA gives SRAM designers another way to balance the pull-up (PU), pass-gate (PG), and pull-down (PD) transistors. FinFET bitcells set device strength through fin count while GAA adds nanosheet width as a sizing knob. In a 6T SRAM cell, a strong pull-down relative to the pass-gate limits read disturbance, while a strong pass-gate relative to the pull-up improves writability. During a write, the pass-gate and write driver pull the node storing “1” below the inverter trip point. During a read, the pull-down holds the node storing “0” low. Bias, threshold voltage, mismatch and assist circuitry set the remaining margin. FinFET high-current cells commonly use a PU:PG:PD fin-count pattern of 1:2:2, a device-sizing ratio rather than a current ratio. Ribbon width lets Intel balance SRAM strengths without adding whole fins. The L2 cell uses its narrowest ribbons for PU and widest for PD, improving writability and read stability respectively. Intel’s disclosed HCC operates without assist; its denser HDC uses negative-bitline write assist. Pulling the selected bitline briefly below ground increases pass-gate overdrive so it can overpower the pull-up at lower supply voltage. That buys density and low voltage writability at the cost of boosting circuitry, switching energy, and additional voltage stress that must be controlled. [31], [32] Four rectangular ribbons give the perimeter = 8 × (width + thickness), before corner rounding. PG/PU is 1.49 and PD/PG is 1.16. The L3 structures closely resemble L2 in layout and cell height. Fewer L3 nanosheet widths are tabulated because fewer high-magnification images were available. DDR PHY The DDR-PHY trades density for controlled analog behavior and reliable off-chip signaling. It contains drivers, receivers, delay circuits, and calibration logic that set drive strength, sampling time, and voltage margin. Repeated four-sheet devices with similar widths fit the use of regular transistor units for matching and programmable drive. Its wider local wiring provides room for current delivery and separation of sensitive signals, while consuming more area than a dense core-logic grid. The layout serves the memory channel’s electrical requirements as well as digital logic density. [33] The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page. Intel 3 GPU devices Vector engine logic Intel 3’s XVE logic uses two-fin PMOS and NMOS devices with power rails in M0. Its cell height and M0 pitch give a seven-track geometry, two tracks more than the 18A logic. One-fin groups also appear among the two-fin devices. Intel 3 L2 SRAM The Intel 3 L2 SRAM uses the familiar HCC sizing pattern: one PU fin, two PG fins, and two PD fins. N3E GPU devices Vector engine logic The N3E XVE field contains repeated two-fin devices with seven-track cell geometry. N3E remains a FinFET process, giving Panther Lake a direct FinFET-to-RibbonFET comparison. N3E L2 SRAM The N3E L2 SRAM uses the same PU:PG:PD fin-count pattern of 1:2:2. Panther Lake-U follows Lunar Lake’s floorplan quite closely. Both pair 4 P-cores with 4 LP E-cores and NPU, media and display engines in similar locations. Lunar Lake also uses Xe2, the direct predecessor to Panther Lake’s Xe3 GPU. This makes Lunar Lake the most direct basis for our comparisons. Arrow Lake differs in core count and uses the older Xe-LPG GPU architecture, so we only use it where it offers a more direct component-level comparison. Compute tile Panther Lake compute-tile floorplans remain sparse even months after launch. Intel 18A’s backside metal and dielectric stack must be removed without damaging the underlying structures before a clean transistor-level floorplan can be imaged. Most published die shots hide or heavily process the background, but we are quite proud of the die shot we achieved and are excited to show the work we have done. We measured the areas of the key components on the compute tile and compared them with their Lunar Lake predecessors on TSMC N3B. These help us to capture changes in block area and compare the two chips across process nodes and designs. Our total tile areas exclude the scribe-line area. The compute-plus-GPU subtotal below uses the PTL-U compute tile and GT1 GPU; it excludes the I/O tile and passive base. Individual block areas use the boundaries marked on the floorplans The compute-plus-GPU row is recomputed from the displayed PTL-U and GT1 areas. Component rows use their stated per-region counts and are not an additive partition of the whole tile. The P-core area remains almost unchanged between Lunar Lake and Panther Lake, despite L2 capacity increasing from 2.5 MiB to 3 MiB. Arrow Lake uses the same Lion Cove core as Lunar Lake but also has a 3 MiB L2. Cougar Cove fits 20% more L2 into the same P-core area. The larger private cache keeps more of each core’s working set close to its execution units, reducing access to shared L3 and DRAM. Extra capacity adds storage leakage and lookup energy, so designers balance it against avoided lower-level accesses. The shared P-core L3 cache also shrank by 14.8%. [2] Cougar Cove combines a similar footprint with Intel’s reported power-efficiency improvements. RibbonFET’s tighter channel control reduces leakage, while PowerVia reduces supply droop and allows tighter voltage guardbands. [1] Darkmont’s four-core LP E-core cluster is 5.0% smaller than Skymont’s on Lunar Lake, with most of the reduction in its L2 regions. The 1 MiB region shrank by 8.4% and the 1.5 MiB region by 14.9%. The tag arrays also use one fewer visible row. Tags identify which memory addresses the data array holds, so rearranging them changes the cache’s layout and wiring without requiring less data capacity. [2] The LP E-cores share one L2. This pools capacity and avoids duplicating all the cache machinery, but the four cores contend for its banks and bandwidth. Their separate cluster also keeps light work away from the performance cluster and its L3, allowing that larger domain to sleep. [1], [2] Cache area includes more than the storage cells. Tags identify each line, decoders select rows, sense amplifiers read the small bitline signal, and wires connect to the banks. Splitting an array into smaller sections shortens wordlines and bitlines, improving access speed, but duplicates peripheral circuits. Panther Lake’s smaller cache regions therefore reflect the complete memory implementation, including how much of each region is devoted to storage. [34] Unlike Meteor Lake and Arrow Lake, Panther Lake has no separate SoC tile. The NPU, LP E-cores, memory controllers, PHYs, media and display engines now share the compute tile. This removes an active die and keeps CPU memory traffic on one die. The cost is moving PHY and I/O-related circuitry onto 18A: drivers, receivers and analog circuits must still meet external voltage, loading and signal-integrity requirements, so their area does not shrink like dense digital logic. [1], [2] The biggest shrink comes from the NPU, which occupies 36.9% less area. NPU 5 consolidates the same total INT8 MAC count into half as many neural compute engines. Each of the three NCEs has a larger MAC array to make the complete NCE envelope 22.6% larger than an NPU 4 engine. Consolidation also halves the number of scratchpads and SHAVE DSPs, from 12 to 6. The MAC array handles matrix multiplication and convolution, while SHAVE executes vector and custom operations that fit the array poorly. [1], [2], [35] The paired floorplans identify each NCE envelope and its scratchpad, MAC, and SHAVE regions. Each measured MAC polygon is counted once per NCE in the area accounting below. The scratchpads store weights, activations, and intermediate results near the MAC arrays, allowing repeated use without fetching them again from DRAM. Halving their number delivers the largest measured area saving but leaves less local storage for the same total MAC count. Layers that no longer fit locally require smaller working tiles or more transfers of intermediate data. The benefit depends on keeping the enlarged arrays busy while managing that tighter storage budget. [36] NPU 5 also adds native FP8. Using half the operand width of FP16 reduces storage and transfer demand, helping workloads fit the smaller local memory budget. Lower precision and format-dependent range make scaling and model validation part of deployment. Hardware activation functions further reduce work that would otherwise occupy the programmable DSPs. [1], [2] Microsoft requires an NPU to deliver at least 40 TOPS for Copilot+ PCs. Both Lunar Lake and Panther Lake meet this threshold, but Panther Lake uses significantly less silicon. GPU tiles Panther Lake is Intel’s first product with Xe3, its latest GPU architecture. It offers two different GPU tiles: a smaller GT1 tile with 4 Xe3 cores on Intel 3 and a larger GT2 tile with 12 Xe3 cores on TSMC N3E. Panther Lake allows us to compare the same GPU architecture across both Intel 3 and TSMC N3E. Wildcat Lake adds a third Xe3 implementation on Intel 18A. A future newsletter will detail Xe3 and its implementation differences across all three process nodes. GT2 scales Xe3 to a different physical layout, with render slices arranged vertically instead of GT1’s horizontal arrangement. Slice placement sets the distances to shared cache banks and the D2D interface. Those wires consume area and add delay, so scaling the number of Xe cores also requires a new balance of cache placement, routing and timing. [1] What’s immediately obvious is that the GT2 tile on TSMC N3E has much smaller Xe cores than GT1. These block areas include logic, caches, and routing. An Xe core on the GT1 tile is ~69% larger than one on Lunar Lake, and ~55% larger than one on GT2. Intel 3 therefore uses substantially more area per Xe core. The block-area gap exceeds the measured logic and SRAM density gaps, bringing routing, timing targets, cell mix, and floorplan allocation into the comparison. The measured vector/matrix engine region is almost unchanged between Lunar Lake and Panther Lake’s GT2 tile. Xe3 retains eight 512-bit vector engines and eight 2048-bit XMX engines per core. Its gains also come from feeding those engines more effectively: more resident threads hide stalls, and variable register allocation lets shaders trade registers per thread against the number of threads kept active. [1] The shared L1/SLM capacity increased by 33% from 192 KiB to 256 KiB, while its area increased only 5%, raising effective density by 27%. L1 retains reused cache lines, while software-managed SLM lets a thread group share data locally. Both reduce traffic to more distant memory. Allocating more SLM per group can also limit how many groups reside on a core at once. [1], [37] The GT1 tile carries 4 MiB of L2 against 16 MiB on the GT2 tile. GT1 divides its L2 cache into four 1 MiB banks, while GT2 uses eight 2 MiB banks. Each bank contains 128 macros, but each N3E macro stores 16 KiB, twice the Intel 3 macro’s 8 KiB capacity. The N3E macro is only 54% larger while holding twice as many bits, giving it 30% higher density: ~23.7 Mbit/mm² versus 18.3 Mbit/mm². Including bank-level circuitry, the gap widens to ~16.9 Mbit/mm² on GT2 versus ~10.4 Mbit/mm² on GT1. GT2 gains density with its macros storing more bits per unit area, and those macros occupy more of each cache bank. Larger macros spread decoder and sense-amplifier overhead across more storage, while a more compact bank layout reduces the share spent on control and routing. The compromise is longer wordlines and bitlines that carry more capacitance. [34] I/O tile Panther Lake uses two I/O tile variants, both fabricated on TSMC N6. The smaller one provides 4 PCIe 5.0 and 8 PCIe 4.0 lanes and serves lower-tier systems as well as those without a discrete GPU, while the larger one adds 8 PCIe 5.0 lanes, bringing the total to 20 lanes, for discrete-GPU connectivity. Panther Lake SKUs with the larger 10- or 12-Xe GPUs use the smaller I/O tile. [38] The smaller I/O tile adds a PCIe 4.0 block and a Thunderbolt block to Lunar Lake’s I/O layout, providing four additional PCIe 4.0 lanes and another Thunderbolt 4 port. Its repeated N6 blocks retain nearly identical areas and layouts. Reusing these proven PHYs and controllers avoids porting and requalifying external interfaces on 18A, where faster digital logic offers less benefit to circuits constrained by the off-chip link. [38] SemiAnalysis’s teardown lab (STEEL) dives deep into the world’s advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. We’re hiring technical experts from system to transistor and everywhere in between. Check out our Careers page. Panther Lake offers scalability and modularity through its disaggregated packaging that partition compute, GPU, and I/O silicon into separate tiles allowing for a suite of tile configurations. This partitioning makes the package part of Intel’s node economics as it determines how much leading-edge wafer area each product consumes, which functions can remain on other processes, and how much configuration freedom Intel can offer from a shared set of tiles. Furthermore, fabricating the compute and GPU tiles separately confines the new 18A process to the compute tile and allows graphics and I/O to use other, more established, and more cost-effective processes. For Panther Lake, the GPU and I/O tiles are assembled alongside the compute tile on a passive silicon base using Foveros-S. Intel’s current technology brief lists a nominal 36 µm pitch for Foveros-S. Through-silicon vias (TSVs) in the base connect the fine wiring above to the larger package connections below. The functional tiles sit side by side on that passive base in a 2.5D configuration. [39] Our cross-section through the compute and GPU tiles shows the package’s wiring hierarchy. Microbumps connect each active tile to the passive silicon base; its fine redistribution layer (RDL) carries the short, dense tile-to-tile links. TSVs carry connections through the base to the package substrate, which fans them out to the much coarser motherboard solder joints. The base supplies interconnect, while computation remains in the active tiles above it. [39] At the compute-tile edge, the higher-magnification inset shows a local microbump spacing of approximately 25.24 µm and a feature width of 12.33 µm. These local spacings are finer than Intel’s nominal Foveros-S value. The X-ray fields further confirm tighter neighboring bumps, consistent across every die-to-die area found on each tile. Additional X-ray analysis is offered after the paywall. Putting the memory controller beside the CPU removes the D2D transfer that CPU memory requests required in Meteor Lake and Arrow Lake. This avoids the extra transmitter, receiver, and link traversal, saving interface energy and latency. Panther Lake’s separate GPU still crosses a D2D link to reach DRAM, so its larger local caches also help contain package traffic. [1], [40] Smaller dies are less likely to contain a random fatal defect, and screening them before assembly prevents one bad tile from consuming a complete package of good silicon. Reuse also spreads design and qualification work across more products. Against those gains, Intel pays for the passive base, D2D circuits, extra bonding and test steps, and losses during assembly. Cost per working product across the portfolio captures the combined effect of wafer yield, reuse, test, and assembly. [29] Wildcat Lake packaging Intel launched Core Series 3, formerly Wildcat Lake, on 16 April 2026 for value mobile and edge systems. Wildcat Lake keeps 18A but removes the passive base and combines more functions on one die to simplify the package. The two products therefore reveal two distinct ways to commercialize the same leading-edge process. [41] Wildcat Lake’s 18A die combines up to two Cougar Cove P-cores, four Darkmont LP E-cores, two Xe3 cores and a smaller NPU. A separate platform-controller die supplies I/O, connected through UCIe, Intel’s first processor implementation of the standard. Consolidating graphics remove a tile boundary and the passive base, reducing assembly complexity for a modest-bandwidth value product. It also ties CPU and graphics scaling to the same die, giving up Panther Lake’s ability to swap in a much larger GPU. [42], [43] In July 2021, Intel CEO Pat Gelsinger set out an ambitious process roadmap aimed at regaining performance leadership by 2025, later described as five nodes in four years. Five years and one CEO later, Intel’s comeback story is not as unambiguously positive as Pat may have hoped. [44], [45] Intel once set the pace for process technology, bringing high-k metal gate technology and FinFETs into volume production years ahead of the rest of the industry. Its 22 nm FinFET process reached consumers with Ivy Bridge in 2012. [46] Intel’s integrated device manufacturing (IDM) model allowed its architects and process engineers to co-optimize products and processes. Starting with Sandy Bridge, Intel dominated x86, while AMD struggled with Bulldozer. That lead faltered at 14 nm and broke at 10 nm. Intel targeted a massive 2.7× density increase, but the node arrived years late and required several revisions before it could support Intel’s full lineup. This delay forced Intel to stretch 14 nm across six generations, while TSMC moved ahead in process technology and AMD recovered in x86. By 2019, Intel was still shipping 14 nm across most of its product stack, with its 10 nm client ramp focused on Ice Lake mobile processors. Meanwhile, TSMC was shipping N7 and N7+, and AMD’s Zen 2 compute chiplets used N7 to raise core counts and improve efficiency. Intel’s process failures were central to its decline, but unsound business decisions furthered their downward slide. Product delays compounded product mistakes, pushing client, server, and FPGA roadmaps off schedule. Several attempts to enter AI (Nervana and Gaudi) and networking (Tofino) also failed to establish lasting businesses. Intel’s recovery has focused on consumer CPUs and advanced packaging. Tiger Lake, Alder Lake, Lunar Lake and now Panther Lake have restored Intel’s consumer roadmap. On the process side, Intel 4 shipped with Meteor Lake, Intel 3 with Granite Rapids and Sierra Forest, and Intel 18A with Panther Lake. Intel has also made advanced packaging part of its foundry offering. However, Intel is still playing catch-up in servers. Several Xeon generations arrived years late and trailed contemporary AMD and Arm server CPUs in performance, efficiency, and core count. The process roadmap is back, but Intel does not hold the same process-technology leadership position it held prior to 10 nm. The introduction of gate-all-around nanosheets and backside power delivery are two of the biggest changes to transistor integration in a decade. Intel took on both changes at once: 18A paired its first RibbonFET with PowerVia in Panther Lake. Panther Lake is a substantial manufacturing milestone. Our cross-sections show how RibbonFET and PowerVia reshape local contacts and wiring, while the floorplans show where architectural consolidation and process choices save area. A sustained competitive lead depends on product performance, cost, yield, and the next implementation. The SemiAnalysis STEEL teardown lab breaks down advanced datacenter and AI hardware. To learn more about our pipeline or to commission a teardown, contact sales@semianalysis.com. WE’RE HIRING: Architecture, floorplan, packaging, manufacturing, and labs experts. Opportunities from system to transistor and everywhere in between. Check out our Careers page.. [1] Intel, “Intel Tech Tour 2025 Panther Lake recap,” Doc. 866361, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/866361/ITT_2025_Panther_Lake_Recap1.pdf [2] Intel, “Core Ultra processors Series 3 datasheet, volume 1,” Doc. 872188-001, Jan. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/872188/872188-001.pdf [3] N. Horiguchi and E. Beyne, “Backside power delivery: How to power chips from the backside,” imec Reading Room, Nov. 25, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/how-power-chips-backside [4] W. Hafez et al., “Intel PowerVia technology: Backside power delivery for high density and high-performance computing,” in Proc. IEEE Symp. VLSI Technol. Circuits, Kyoto, Japan, Jun. 2023, pp. 1–2, doi: 10.23919/vlsitechnologyandcir57934.2023.10185208. [5] K. Fischer et al., “Intel 18A platform technology featuring RibbonFET (GAA) and PowerVia for advanced high-performance computing,” in Proc. Symp. VLSI Technol. Circuits, Kyoto, Japan, Jun. 2025, pp. 1–3, doi: 10.23919/vlsitechnologyandcir65189.2025.11075006. [6] K.-F. Cheng, C.-L. Teng, H.-Y. Huang, and H.-C. Chen, “Metal oxide composite as etch stop layer,” U.S. Patent 12 176 247 B2, Dec. 24, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US12176247B2/en [7] S. W. King, “Dielectric barrier, etch stop, and metal capping materials for state of the art and beyond metal interconnects,” ECS J. Solid State Sci. Technol., vol. 4, no. 1, pp. N3029–N3047, 2015, doi: 10.1149/2.0051501jss. [8] A. V. Mule’, D. J. Towner, D. Seghete, C. R. Ryder, and A. A. Gonzalez, “Multi-layer etch stop layers for advanced integrated circuit structure fabrication,” U.S. Patent Appl. 20220102343 A1, Mar. 31, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20220102343A1/en [9] C.-C. Wang and J. H. Wang, “Interconnect structure with dielectric cap layer and etch stop layer stack,” U.S. Patent Appl. 20230253247 A1, Aug. 10, 2023. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20230253247A1/en [10] Y. J. Wu, K.-F. Cheng, C.-C. Lee, H.-K. Chang, and H.-Y. Huang, “Etch stop layer for interconnect structures,” U.S. Patent Appl. 20240332070 A1, Oct. 3, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20240332070A1/en [11] M. G. Rainville, N. Shankar, K. S. Reddy, and D. M. Hausmann, “Deposition of aluminum oxide etch stop layers,” U.S. Patent Appl. 20180197770 A1, Jul. 12, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.justia.com/patent/20180197770 [12] J. S. Leib et al., “Conductive lines having molybdenum liner and tungsten fill for advanced integrated circuit structure fabrication,” U.S. Patent Appl. 20240429126 A1, Dec. 26, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.justia.com/patent/20240429126 [13] M. Naik, “Cobalt enables power and performance scaling at single-digit logic nodes,” Applied Materials, Dec. 17, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://www.appliedmaterials.com/us/en/blog/blog-posts/cobalt-enables-power-and-performance-scaling-at-single-digit-logic-nodes.html [14] Lam Research, “Breaking through AI’s invisible barrier with molybdenum,” Lam Research Newsroom, May 6, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://newsroom.lamresearch.com/molybdenum-metallization-ai-revolution [15] P. Yashar, G. Malyavanatham, and H. Vijwani, “Integrated circuit interconnect structures with niobium barrier materials,” U.S. Patent Appl. 20240112951 A1, Apr. 4, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20240112951A1/en [16] Applied Materials, “Applied Materials unveils chip wiring innovations for more energy-efficient computing,” Applied Materials Investor Relations, Jul. 8, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-unveils-chip-wiring-innovations-more-energy [17] Samsung, “Samsung showcases AI-era vision and latest foundry technologies at SFF 2024,” Samsung Semiconductor, Jun. 13, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://semiconductor.samsung.com/news-events/news/samsung-showcases-ai-era-vision-and-latest-foundry-technologies-at-sff-2024/ [18] C. W. Yeung et al., “Channel geometry impact and narrow sheet effect of stacked nanosheet,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2018, pp. 28.6.1–28.6.4, doi: 10.1109/iedm.2018.8614608. [19] S. Mochizuki et al., “Evaluation of (110) versus (001) channel orientation for improved nFET/pFET device performance trade-off in gate-all-around nanosheet technology,” in Proc. Int. Electron Devices Meeting (IEDM), Dec. 2023, pp. 1–4, doi: 10.1109/iedm45741.2023.10413854. [20] D. G. Ouellette et al., “Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer,” U.S. Patent 12 051 698 B2, Jul. 30, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US12051698B2/en [21] imec, “Advancing the CFET-based device roadmap with novel integration modules and standard-cell architectures,” imec, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/advancing-cfet-based-device-roadmap-novel-integration-modules-and-standard-cell [22] A. Reznicek, X. Miao, C. Lee, and J. Zhang, “Wrap around contact for nanosheet source drain epitaxy,” U.S. Patent 11 302 813 B2, Apr. 12, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US11302813B2/en [23] J. A. Kittl, J. G. Hong, D. R. Palle, and M. S. Rodder, “Methods for varied strain on nano-scale field effect transistor devices,” U.S. Patent 9 978 833 B2, May 22, 2018. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US9978833B2/en [24] S. Gandikota et al., “Method of reducing metal gate resistance for next generation NMOS device application,” Int. Patent Appl. WO 2024/137272 A1, Jun. 27, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/WO2024137272A1/en [25] J. Zhang et al., “Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications,” in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2019, pp. 11.6.1–11.6.4, doi: 10.1109/iedm19573.2019.8993490. [26] C. Yoo, J. Chang, Y. Seon, H. Kim, and J. Jeon, “Analysis of self-heating effects in multi-nanosheet FET considering bottom isolation and package options,” IEEE Trans. Electron Devices, vol. 69, no. 3, pp. 1524–1531, Mar. 2022, doi: 10.1109/ted.2022.3141327. [27] S. S. Pradhan, D. B. Bergstrom, J.-S. Chun, and J. Chiu, “Tungsten gates for non-planar transistors,” European Patent Appl. EP 3 506 367 A1, Jul. 3, 2019. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/EP3506367A1/en [28] L. Schloss and X. Ba, “Tungsten films having low fluorine content,” U.S. Patent 9 754 824 B2, Sep. 5, 2017. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US9754824B2/en [29] Intel Foundry, “Accelerating AI and HPC with advanced process and packaging technologies,” Doc. 367370-001US, Jun. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/dam/www/central-libraries/us/en/documents/2025-11/intel-foundry-hpc-ai-brief.pdf [30] M. Lofrano, X. Chang, H. Oprins, and Z. Tokei, “Mitigating the thermal bottleneck in advanced interconnects,” imec, Sep. 28, 2023. Accessed: Sep. 14, 2026. [Online]. Available: https://www.imec-int.com/en/articles/mitigating-thermal-bottleneck-advanced-interconnects [31] S. Bair, “Intel at ISSCC 2025: Navid Shahriari invited talk, eight papers, forums, panelist & product details,” Intel Community, Feb. 19, 2025. Accessed: Sep. 14, 2026. [Online]. Available: https://community.intel.com/t5/Blogs/Tech-Innovation/Edge-5G/Intel-at-ISSCC-2025-Navid-Shahriari-Invited-Talk-Eight-Papers/post/1667592 [32] D. Chandra, E. Potladhurthi, D. R. S. Reddy, and K. S. Rengarajan, “Tunable negative bitline write assist and boost attenuation circuit,” U.S. Patent Appl. 20160203857 A1, Jul. 14, 2016. Accessed: Sep. 14, 2026. [Online]. Available: https://patents.google.com/patent/US20160203857A1/en [33] Synopsys, “Advantages of firmware-based training in high-speed DDR IP,” Synopsys IP Technical Bulletin. Accessed: Sep. 14, 2026. [Online]. Available: https://www.synopsys.com/articles/firmware-based-training-ddr-ip.html [34] N. Muralimanohar, R. Balasubramonian, and N. P. Jouppi, “CACTI 6.0: A tool to understand large caches,” Hewlett-Packard Laboratories, 2009. Accessed: Sep. 14, 2026. [Online]. Available: https://users.cs.utah.edu/~rajeev/cacti6/cacti6-tr.pdf [35] Intel, “Intel Tech Tour 2024 Lunar Lake AI hardware accelerators,” Doc. 824436, 2024. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/824436/2024_Intel_Tech%20Tour%20TW_Lunar%20Lake%20AI%20Hardware%20Accelerators.pdf [36] Y.-H. Chen, J. Emer, and V. Sze, “Eyeriss: A spatial architecture for energy-efficient dataflow for convolutional neural networks,” in Proc. 43rd ACM/IEEE Annu. Int. Symp. Comput. Archit. (ISCA), Jun. 2016, pp. 367–379, doi: 10.1109/isca.2016.40. [37] Intel, “Introduction to the Xe-HPG architecture,” Doc. 758306, Nov. 4, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/developer/articles/technical/introduction-to-the-xe-hpg-architecture.html [38] Intel, “Core Ultra processors Series 3 for the edge,” Doc. 855291. Accessed: Sep. 14, 2026. [Online]. Available: https://cdrdv2-public.intel.com/855291/Intel%C2%AE%20Core%E2%84%A2%20Ultra%20Processors%20Series%203%20for%20Edge%20Overview_2.pdf [39] Intel Foundry, “Foveros technology brief,” Doc. 366411-001US, Feb. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/dam/www/central-libraries/us/en/documents/2025-07/foveros-25d-product-brief.pdf [40] D. Das Sharma, “UCIe: Building an open chiplet ecosystem,” UCIe Consortium, 2022. Accessed: Sep. 14, 2026. [Online]. Available: https://www.uciexpress.org/_files/ugd/0c1418_c5970a68ab214ffc97fab16d11581449.pdf [41] Intel, “Intel launches Intel Core Series 3 processors,” Intel Newsroom, Apr. 16, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-launches-intel-core-series-3-processors-changing-the-game-for-everyday-computing.html [42] Intel, “Core Series 3 launch press deck,” Apr. 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://download.intel.com/newsroom/2026/Intel-Core-Series-3/Intel-Core-Series-3-Launch-Press-Deck.pdf [43] Intel, “Intel outlines architectures for agentic AI at Hot Chips 2026,” Intel Newsroom, Aug. 24, 2026. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intel.com/content/www/us/en/newsroom/news/client-computing/intel-outlines-architectures-for-agentic-ai-at-hot-chips-2026.html [44] Intel, “Intel accelerates process and packaging innovations,” Intel Investor Relations, Jul. 26, 2021. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/filings-reports/all-sec-filings/content/0001193125-21-224438/d199788dex991.htm [45] Intel, “Intel reports third-quarter 2021 financial results,” Intel Investor Relations, Oct. 21, 2021. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/news-events/press-releases/detail/1505/intel-reports-third-quarter-2021-financial-results [46] Intel, “3rd generation Intel Core processors bring exciting new experiences and fun to the PC,” Intel Investor Relations, Apr. 23, 2012. Accessed: Sep. 14, 2026. [Online]. Available: https://www.intc.com/news-events/press-releases/detail/577/3rd-generation-intel-core-processors-bring-exciting
AI Actress Tilly Norwood Marks One Year Since Zurich Debut With Talk of Tom Holland, Olivia Colman
A year after her debut, AI actress Tilly Norwood addressed backlash and named Tom Holland and Olivia Colman as dream collaborators.
Busani named director of Optical Science and Engineering
Tito Busani, an associate professor in the department of electrical and computer engineering, has been named the new director of the Optical Science and Engineering program at The University of New Mexico.
Dolph Lundgren recalls sending Sylvester Stallone to hospital during ‘Rocky IV’ filming after hitting him too hard
In his new memoir, Dolph Lundgren looked back on the injury that hospitalized his ‘Rocky IV’ costar Sylvester Stallone: ‘A streetcar named Drago’ hit him.
Quantum computer simulates matter “popping into existence”
Scientists recreated a particle-forming process linked to the extreme physics of the early universe using a 13-ion quantum simulator. The breakthrough suggests quantum computers could eventually help researchers investigate how matter formed and evolved after the Big Bang.
Dolph Lundgren recalls sending Sylvester Stallone to hospital during “Rocky IV” filming after hitting him too hard
“Sly later said ‘a streetcar named Drago’ had hit him,” Lundgren wrote in his memoir.
Trump Promised the Truth About UFOs. These Scientists Are Waiting.
The president named a science council to review the government’s data. What's taking so long?
The 2011 Japan Tsunami Created Hybrid Fish, But They Almost Completely Disappeared
A changing world is pushing species boundaries in unusual ways, and the tsunami gave marine biologists a view of the process vastly sped up
Trump heads to Texas-Tennessee football game as midterm rallies slide
Trump will attend the Tennessee-Texas college football game on Saturday and the President’s Cup golf tournament on Sunday.
Lucas: What if politics actually worked?
There are some 3.2 million registered independent voters in Massachusetts compared to 1.3 million Democrats and 424,000 Republicans.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.
Family business blends Cajun, Caribbean flavors at Continental Kitchen
Family-run catering business -- Grub 2 Go -- is combining Cajun and Caribbean flavors while working out of a shared commercial kitchen during Hispanic Heritage.